Publicaciones

• Communication dans un congrès

AlInAs/GaInAs HEMTs for power amplification at 60 GHz

M. Zaknoune, X. Wallart, F Medjdoub, M. Ardouin, B. Bonte, D. Theron, Jean-Claude de Jaeger

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States. ⟨hal-00149711⟩

• Autre publication scientifique

Stabilité des interactions silicium-hydrogène sous irradiation optique ou électronique dans les semiconducteurs à base de GaAs. Application à la fiabilité et à la nanofabrication de composants III-V

S. Silvestre

2002. ⟨hal-00162706⟩

• Communication dans un congrès

Evaluation de la dégradation des ouvrages en béton par ondes ultrasonores haute fréquence

S. Ould Naffa, M. Goueygou, Bogdan Piwakowski, F. Buyle-Bodin

Actes du 6ème Congrès Français d'Acoustique, CFA 2002, 2002, Lille, France. ⟨hal-00250221⟩

• Chapitre d'ouvrage

Chapitre 5 : Micro-actionneurs en alliage à mémoire de forme

Nicolas Chaillet, L. Buchaillot, Joël Abadie, I. Roch, Christian Lexcellent

Microactionneurs électromagnétiques, électrostatiques et électroactifs, HERMES Science Publications, pp. 179-219, 2002, Collection EGEM (Electronique, Génie Electrique, Micro-technologies). ⟨hal-00092477⟩

• Communication dans un congrès

Reliability of packaging MEMS in shock environment : crack and stiction modeling

O. Millet, D. Collard, L. Buchaillot

2002, pp.696-703. ⟨hal-00148789⟩

• Article dans une revue

Vacuum and cryogenic station for Micro-Electro-Mechanical Systems probing and testing

Bernard Legrand, E. Quévy, B. Stefanelli, D. Collard, L. Buchaillot

Review of Scientific Instruments, 2002, 73, pp.4393-4395. ⟨hal-00148782⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Communication dans un congrès

Critical angular dependance of the polarising field on the magnetoelastic dynamics near the SRT in TbFe/FeCo multilayers

Nicolas Tiercelin, Vladimir Preobrazhensky, Jamal Ben Youssef, Philippe Pernod, Henri Le Gall

Summary form only given. We reflect the results of the latest investigations on giant magnetostrictive multilayers in which a field induced spin reorientation transition (SRT) is used to develop new ways of control for magnetostrictive MEMS such as the possibility of "sub-harmonic"...

IEEE International Magnetics Conference, Intermag Europe 2002, Apr 2002, Amsterdam, Netherlands. pp.AS4, ⟨10.1109/INTMAG.2002.1000721⟩. ⟨hal-00250218⟩

• Communication dans un congrès

Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures

S. Grenier, A. Letoublon, M.G. Proietti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia

2002, pp.24-33. ⟨hal-00149685⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction...

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩