Publicaciones
Affichage de 14691 à 14700 sur 16104
Characterization of phosphorus and boron heavily doped LPCVD polysilicon films in the temperature range 293-373K
Mohamed Boutchich, Katir Ziouche, Pascale Godts, Didier Leclercq
IEEE Electron Device Letters, 2002, 23 (3), pp.139-141. ⟨10.1109/55.988817⟩. ⟨hal-00148729⟩
Beam forming through the use of electromagnetic band gap materials
Tahsin Akalin, G. Wolf, S. Arscott, Xavier Mélique, Olivier Vanbésien, Eric Estebe, Didier Lippens
25th ESA Antenna Workshop, 2002, Noordwijk, Netherlands. ⟨hal-00148652⟩
Grazing incidence diffraction anomalous fine structure of self-assembled semiconductor nanostructures
S. Grenier, A. Letoublon, M.G. Proietti, Hubert Renevier, L. Gonzalez, J.M. Garcia, C. Priester, J. Garcia
2002, pp.24-33. ⟨hal-00149685⟩
Improvement of performance at 60 GHz of metamorphic HEMT on GaAs using double recess technology
M. Ardouin, B. Bonte, M. Zaknoune, Y. Cordier, S. Bollaert, D. Theron, Jean-Claude de Jaeger
25th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2002, 2002, Chernogolovka, Russia. ⟨hal-00149713⟩
Diffusion d'un élement V à partir d'une surface d'un semiconducteur III-V, influence de la reconstruction et de la morphologie
C. Priester
Journées Surfaces et Interfaces, JSI 2002, 2002, Toulouse, France. ⟨hal-00149684⟩
Mise en évidence des effets de pièges sur le comportement électrique de composants HEMTs dans la filière nitrure de gallium
M. Werquin, Christophe Gaquière, Y. Guhel, A. Minko, Virginie Hoel, D. Ducatteau, E. Delos, M.A. Poisson, F. Semond, Jean-Claude de Jaeger
3ème Ecole Thématique CNRS : Matériaux Nitrures d'Elements III, 2002, La Plagne, France. ⟨hal-00149733⟩
Charge transport in some molecular devices : self-assembled molecular rectifiers and DNA molecules
D. Vuillaume
6th Conference on Molecular-Scale Electronics, 2002, Key West, FL, United States. ⟨hal-00148708⟩
MIMO propagation channel models in underground environment
J.F. Pardonche, M. Berbineau, C. Seguinot, M. Lienard
2002, pp.Session SunPmOR1, 1-6. ⟨hal-00149644⟩
AlInAs/GaInAs HEMTs for power amplification at 60 GHz
M. Zaknoune, X. Wallart, F Medjdoub, M. Ardouin, B. Bonte, D. Theron, Jean-Claude de Jaeger
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2002, 2002, Austin, TX, United States. ⟨hal-00149711⟩
Monte Carlo study of the breakdown of an AlInAs/GaInAs HEMT on InP with an InP etch stop layer
F Medjdoub, D. Theron, F. Dessenne, R. Fauquembergue, Jean-Claude de Jaeger
2002, pp.57-62. ⟨hal-00149710⟩