Publicaciones

• Communication dans un congrès

Diffusion d'un élement V à partir d'une surface d'un semiconducteur III-V, influence de la reconstruction et de la morphologie

C. Priester

Journées Surfaces et Interfaces, JSI 2002, 2002, Toulouse, France. ⟨hal-00149684⟩

• Article dans une revue

Interpretation and theory of tunneling experiments on single nanostructures

Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo

We discuss the interpretation of tunneling experiments on single molecules or semiconductor quantum dots weakly coupled to metallic electrodes. We identify the main features in the current-voltage curves and in the conductance using an extension of the theory of single charge tunneling. We analyze...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2002, 65, pp.165334/1-14. ⟨10.1103/PhysRevB.65.165334⟩. ⟨hal-00149663⟩

• Article dans une revue

Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers

C. Mavroidis, J. Harris, R. Jackman, I. Harrison, B. Ansell, Z. Bougrioua, I. Moerman

We have combined plasma etching with the Hall effect and resistivity measurements between 10 and 300 K to study the depth distribution of conduction in silicon (Si)-doped GaN epitaxial layers grown on sapphire substrates by two different metalorganic chemical vapor deposition processes. Reduction...

Journal of Applied Physics, 2002, 91 (12), pp.9835. ⟨10.1063/1.1477604⟩. ⟨hal-02906594⟩

• Article dans une revue

Photodissociation of hydrogen passivated dopants in gallium arsenide

L. Tong, J.A. Larsson, M. Nolan, M. Murthag, J.C. Greer, M. Barbe, F. Bailly, Jérome Chevalier, S. Sylvestre, D. Loridant-Bernard, E. Constant, M. Constant

A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the SiGa–H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2002, 186, pp.234-239. ⟨10.1016/S0168-583X(01)00949-1⟩. ⟨hal-00278930⟩

• Autre publication scientifique

Stabilité des interactions silicium-hydrogène sous irradiation optique ou électronique dans les semiconducteurs à base de GaAs. Application à la fiabilité et à la nanofabrication de composants III-V

S. Silvestre

2002. ⟨hal-00162706⟩

• Communication dans un congrès

Modélisation numérique et caractérisation expérimentale du champ de cavitation ultrasonore

P. Mosbah, Bertrand Dubus, O. Ledez, C. Campos-Pozuelo, C. Granger

2002, pp.747-750. ⟨hal-00147777⟩

• Article dans une revue

Design production and testing of PMN-PT electrostrictive transducers

J. Coutte, Bertrand Dubus, J.C. Debus, C. Granger, D. Jones

Ultrasonics, 2002, 40, pp.883-888. ⟨hal-00147756⟩

• Article dans une revue

Fast electromagnetic characterization method of film-shaped materials using coplanar up to V-band

J. Hinojosa, K. Lmimouni, Gilles Dambrine

Electronics Letters, 2002, 38, pp.373-374. ⟨hal-00147838⟩

• Article dans une revue

Microwave technique for detection, location and sizing of buried objects

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

The detection, location, and sizing of immersed objects in a host medium are tasks of interest in many fields. One of the most suitable tools for the noninvasive measurements of buried objects is the use of microwaves. We propose in this paper a microwave method based on the knowledge of the...

Microwave and Optical Technology Letters, 2002, 32 (2), pp.145-149. ⟨10.1002/mop.10115⟩. ⟨hal-00147852⟩

• Article dans une revue

Fabrication of a pMUT using silicon bulk micromachining and a sputtered PZT layer

W. Daniau, Karim Dogheche, S. Ballandras, Eric Cattan, Denis Remiens, W. Steichen, P. Blind

Proc. of the 2nd WorkShop on MUT, Besançon, 2002, pp. june. ⟨hal-00123195⟩