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Affichage de 14911 à 14920 sur 16064

Communication dans un congrès

High performance AlGaN/GaN HEMTs on a resistive silicon substrate

Virginie Hoel, Y. Guhel, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, Y. Cordier, F. Semond, F. Natali, J. Massies

11th European Heterostrucrure Technology Workshop, HETECH 01, 2001, Padova, Italy. ⟨hal-00152670⟩

Communication dans un congrès

Hydrogen passivation and local electron-beam reactivation of silicon dopants in GaAs characterized by differential conductance and STM spectroscopy measurements

Thierry Melin, S. Silvestre, J.P. Nys, B. Grandidier, D. Bernard-Loridant, D. Stievenard, E. Constant, C. Chevallier

11th International Conference on Scanning Tunneling Microscopy, Spectroscopy and Related Techniques, STM 2001, 2001, Vancouver, Canada. ⟨hal-00152579⟩

Communication dans un congrès

60 GHz 420 mW/mm low gate current GaInAs/InP composite channel HEMT on InP substrate

Mustafa Boudrissa, Elisabet Delos, X. Wallart, Didier Theron, Jean-Claude de Jaeger

XXV Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe, WOCSDICE 2001, May 2001, Cagliari, Sardinia, Italy. ⟨hal-00152631⟩

Communication dans un congrès

Réalisation de nouveaux microradiomètres sur silicium. Etude des propriétés thermoélectriques du polysilicium dopé N et P

Katir Ziouche, Mohamed Boutchich, Pascale Godts, Didier Leclercq

8èmes Journées Nationales Microélectronique et Optoélectronique, JNMO 2001, 2001, Aussois, France. ⟨hal-00152208⟩

Communication dans un congrès

Low Schottky barrier source/drain for advanced MOS architecture

Emmanuel Dubois, G. Larrieu

Franco-Swedish Workshop on SOI, 2001, Grenoble, France. ⟨hal-00152239⟩

Article dans une revue

A unified formalism using effective surface permittivity to study acoustic waves in various anisotropic and piezoelectric multilayers

V. Zhang, Jean-Etienne Lefebvre, C. Bruneel, Tadeusz Gryba

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2001, 48, pp.1449-1461. ⟨hal-00151723⟩

Autre publication scientifique

Etude, optimisation et réalisation de composants HIGFET complémentaires à grille submicronique : application à la conception de convertisseur analogiques numériques ultra-rapides

M. Roger

2001. ⟨hal-00151763⟩

Communication dans un congrès

Transistors et circuits AlInAs/InGaAs pour applications millimétriques et sub-millimétriques

S. Bollaert, A. Cappy

Atelier CNES, 2001, Toulouse, France. ⟨hal-00151773⟩

Article dans une revue

Growth of strained Ga<sub>1-x</sub>In<sub>x</sub>P layers on GaP (001) by gas source molecular beam epitaxy: similarities and differences with the growth of strained arsenides

X. Wallart, D. Deresmes, F. Mollot

Using reflection high energy electron diffraction and atomic force microscopy, the growth of Ga1−xInxP alloys on GaP (0 0 1) with x varying from 0.2 to 1 (InP) is investigated and compared to that of arsenides on GaAs (0 0 1) or InP (0 0 1). At 520°C, the evolution of the critical thickness for 3D...

Communication dans un congrès

Microtechnologies hyperfréquences

D. Lippens

Second International Meeting on Micro and Nanotechnologies, MINATEC 2001, 2001, Grenoble, France. ⟨hal-00152084⟩