Publicaciones
Affichage de 14871 à 14880 sur 16064
A miniature class V flextensional cymbal transducer with directional beam patterns : the double driver
J. Zhang, Anne-Christine Hladky, W.J. Hughes, R.E. Newham
Ultrasonics, 2001, 39, pp.91-95. ⟨hal-00151685⟩
From finite element modeling of PNM electrostrictive materials to the realization and testing of Langevin type transducers
J. Coutte, Bertrand Dubus, J.C. Debus, C. Granger, D. Jones
Ultrasonics International, 2001, Delft, Netherlands. ⟨hal-00151715⟩
Large amplitude vibration of multilayered piezoelectric ceramics for use in high power transducers
Bertrand Dubus, G. Haw, C. Granger, O. Ledez
2001 US Navy Workshop on Acoustic Transduction Materials and Devices, 2001, Baltimore, MD, United States. ⟨hal-00151718⟩
Acoustic modes in cylindrically orthotropic hollow cylinders
Jean-Etienne Lefebvre, V. Zhang, A. Haddou, Joseph Gazalet, Tadeusz Gryba
2001, pp.769-772. ⟨hal-00151721⟩
Comportement électrique à haute température de transistors HEMT's AlGaN/GaN
Y. Guhel, B. Boudart, Virginie Hoel, M. Werquin, Christophe Gaquière, Jean-Claude de Jaeger, M.A. Poisson, I. Daumiller, E. Kohn
Actes des 12èmes Journées Nationales Microondes, JNM 2001, 2001, Poitiers, France. ⟨hal-00152651⟩
H-Si doping profile in GaAs by scanning tunneling microscopy
B. Grandidier, S. Silvestre, J.P. Nys, Thierry Melin, D. Bernard-Loridant, D. Stievenard, E. Constant, Jacques Chevallier
Applied Physics Letters, 2001, 79, pp.3278-3280. ⟨hal-00152490⟩
PZT thin film bi-layer devices for improved actuation in MEMS
D.F.L. Jenkins, W.W. Clegg, Eric Cattan, Denis Remiens
2001, pp.729-732. ⟨hal-00152486⟩
Matrice de communication en optique intégrée sur matériaux III-V
Karine Blary, Y. Hernandez, Jean-Pierre Vilcot, Joseph Harari, Didier Decoster, M. Schaller, Jean Chazelas
8èmes Journées Nationales Microélectronique et Optoélectronique III-V, JNMO 2001, 2001, Aussois, France. ⟨hal-00152508⟩
Etude de HEMTs sur GaN
B. Boudart, Christophe Gaquière, Y. Guhel, Virginie Hoel, N. Vellas, M. Werquin, Jean-Claude de Jaeger
GDR Matériaux Grand Gap, 2001, Grenoble, France. ⟨hal-00152669⟩
Characterisation of GaN FETs under pulsed conditions : DC and RF measurements from room temperature up to 250°C
D. Theron, Christophe Gaquière, N. Vellas, B. Boudart, Y. Guhel, Jean-Claude de Jaeger
Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2001, 2001, New Orleans, LA, United States. ⟨hal-00152673⟩