Publicaciones

Affichage de 15281 à 15290 sur 16064


  • Communication dans un congrès

High frequency noise parameters of 0.25 µm SOI MOSFETs : comparison between fully and partially-depleted devices

M. Vanmackelberg, L. Picheta, C. Raynaud, J.L. Pelloie, F. Martin, D. Vanhoenacker, Gilles Dambrine

2000, pp.51-54. ⟨hal-00157905⟩

  • Communication dans un congrès

70 GHz Fmax fully-depleted SOI MOSFET's for low power wireless applications

C. Raynaud, O. Faynot, J.L. Pelloie, C. Tabone, A. Grouillet, F. Martin, Gilles Dambrine, M. Vanmackelberg, L. Picheta, E. Mackowiak, H. Brut, P. Llnares, J. Sevenhans, E. Compagne, G. Fletcher

2000, 4 pp. ⟨hal-00157876⟩

  • Communication dans un congrès

Data transmission using an optical microwave link for wireless communications

P. Descamps, J. Vindevoghel, E. Vestiel, Jean-Pierre Vilcot

2000, pp.1261-1264. ⟨hal-00158142⟩

  • Communication dans un congrès

A full GaAs phased-locked oscillator using sampling phase detector and sampling frequency detector

P. Lefevre, N. Haese, G. Lewandowski, Christophe Loyez, P.A. Rolland

2000, 4 pp. ⟨hal-00158148⟩

  • Communication dans un congrès

Silicon nitride passivation on GaN MESFET's

Christophe Gaquière, B. Boudart, R. Amokrane, Y. Guhel, Y. Crosnier, Jean-Claude de Jaeger, F. Omnes

2000, pp.VIII-11, VIII-12. ⟨hal-00159001⟩

  • Communication dans un congrès

First results of GaN MESFET's realized on (111) Si

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

10th European Workshop on Heterostructure Technology, HeTech 2000, 2000, Ulm, Germany. ⟨hal-00159036⟩

  • Communication dans un congrès

Numerical modelling, experimental investigations, stress control for flat glass tempering

Dominique Lochegnies

Challenges and Breakthrough Technologies, 2000, Amsterdam, Netherlands. ⟨hal-00159082⟩

  • Communication dans un congrès

Weighting functions for near field microwave radiometry and applications

Ahmed Mamouni, T. Lasri, Bertrand Bocquet, Y. Leroy

Proceedings of the 2000 Progress in Electromagnetics Research Symposium, PIERS 2000, Jul 2000, Cambridge, MA, United States. ⟨hal-00158174⟩