Publicaciones

• Communication dans un congrès

Frequency difference generation in the terahertz region using LTG-GaAs photodetector

Emilien Peytavit, Gaël Mouret, Jean-Francois Lampin, Pascal Masselin, P. Mounaix, F. Mollot, D. Lippens

We demonstrated Terahertz generation by optical frequency difference with a continuous tuning between 0.2 1 micro W and 3 THz 1 nW. To this aim, high speed photodetectors with an interdigited photoconductor scheme on a submicron scale, loaded by THz log-periodic antennas, were deposited on a 1...

International Terahertz Workshop (ITW 2000), Sep 2000, Sandbjerg, Denmark. ⟨hal-00158202⟩

• Article dans une revue

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Bernard Legrand, Vincent Agache, Jean-Philippe Nys, Vincent Senez, Didier Stiévenard

Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh...

Applied Physics Letters, 2000, 76, pp.3271-3273. ⟨10.1063/1.126603⟩. ⟨hal-00158537⟩

• Article dans une revue

A MEMS oriented distributed processor for integrated feed-back controller

Y. Mita, A. Kaiser, Patrick Garda, M. Milgram, H. Fujita

Electronics and Communications in Japan, Part 2 : Electronics, 2000, 83, pp.48-55. ⟨hal-00158498⟩

• Article dans une revue

Magneto-acoustic ceramics for parametric sound wave phase conjugators

Andrey Brysev, Philippe Pernod, Vladimir Preobrazhensky

The paper reflects the recent experimental results on the elaboration and study of active materials for magneto-acoustic phase conjugators (MAPCs). The results of complex measurements of MAPC parameters are demonstrated on typical samples of NiFe2O4 magnetostrictive ceramics. The mechanism of...

Ultrasonics, 2000, 38 (1-8), pp.834-837. ⟨10.1016/S0041-624X(99)00193-6⟩. ⟨hal-00158452⟩

• Communication dans un congrès

Design and realization of sub-100 nm gate length HEMTs

T. Parenty, S. Bollaert, J. Mateos-Lopez, A. Cappy

10th European Workshop on Heterostructure Technology, heTech'00, Sep 2000, Günzburg, Germany. ⟨hal-00157904⟩

• Article dans une revue

Non-linear actuation of cantilevers using giant magnetostrictive thin films

Nicolas Tiercelin, Philippe Pernod, Vladimir Preobrazhensky, Henri Le Gall, Jamal Ben Youssef

In the present paper, we report the first results concerning a centimetre cantilever driven through non-linear effects in thin magnetostrictive films. Bimorph centimetre beams (24 mm×5 mm) were designed using 160 μm thick glass and 0.4 μm thick multilayer TbFe/Fe films deposited via RF sputtering,...

Ultrasonics, 2000, 38 (1-8), pp.64-66. ⟨10.1016/S0041-624X(99)00061-X⟩. ⟨hal-00158456⟩

• Article dans une revue

Mechanism of polariton-stimulation in a CdTe-based microcavity

F. Boeuf, R. Andre, R. Romestain, L.S. Dang, Emmanuel Peronne, Jean-Francois Lampin, D. Hulin, Antigoni Alexandrou

Physica Status Solidi A (applications and materials science), 2000, 178, pp.129-132. ⟨hal-00158229⟩

• Article dans une revue

Kinetics of oxydation by scanning probe microscopy : a space-charge-limited model

Emmanuel Dubois, J.L. Bubendorff

This article proposes an enhanced oxidation model for scanning probe microscope (SPM) nanolithography that reproduces the power-of-time law reported for tip-induced anodic oxidation. It is shown that the space charge resulting from nonstoichiometric states strongly limits the oxidation rate. The...

Journal of Applied Physics, 2000, 87, pp.8148-8154. ⟨10.1063/1.373510⟩. ⟨hal-00158510⟩

• Article dans une revue

High anisotropic conductivity in organic insulator/semiconductor monolayer heterostructure

J. Collet, S. Lenfant, D. Vuillaume, O. Bouloussa, F. Rondelez, J.M. Gay, K. Kharn, C. Chevrot

Applied Physics Letters, 2000, 76, pp.1339-1341. ⟨hal-00158476⟩

• Article dans une revue

FECTED oscillator optronic application feasibility

F. Driouch, M.R. Friscourt, Christophe Dalle

Solid-State Electronics, 2000, 44, pp.1455-1461. ⟨hal-00005313⟩