Publicaciones
Affichage de 15401 à 15410 sur 16231
Theory of scanning tunneling microscopy of defects on semiconductors surfaces
X. de La Broïse, C. Delerue, M. Lannoo, B. Grandidier, D. Stievenard
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2000, 61, pp.2138-2145. ⟨hal-00158951⟩
A study of the formation of nano-domains in mixed alkylsiloxane self-assembled monolayers on silicon
Laurent Breuil, Dominique Vuillaume
Proceedings of the 9th International Conference on Organized Molecular Films, LB9, Aug 2000, Potsdam, Germany. ⟨hal-00158958⟩
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN
B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahreche, F. Omnes
Journal of Electronic Materials, 2000, 29, pp.603-606. ⟨hal-00158984⟩
Performance comparison of advanced receiver structures for dispersive DECT channels
M. Zaizouni, Jean-Michel Rouvaen, Atika Rivenq, F. Haine
Wireless Personal Communications, 2000, 15, pp.199-205. ⟨hal-00159055⟩
Diagnosis of trapping phenomena in GaN MESFET's
G. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière
2000, pp.389-392. ⟨hal-00159002⟩
Theoretical study of two different systems with surface strain modulation (from an atomistic point of view) : roughness assisted alloy demixing at a growth front and systems with buried dislocation network
C. Priester
Material Research Society Spring Meeting, 2000, San Francisco, CA, United States. ⟨hal-00158968⟩
Theory of electronic transport in silicon nanostructures
Yann-Michel Niquet, Christophe Delerue, Guy Allan, Michel Lannoo
Material Research Society Fall Meeting, 2000, Boston, MA, United States. ⟨hal-00158970⟩
Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate
Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger
30th European Microwave Conferences, 2000, Paris, France. pp.90-93. ⟨hal-00159006⟩
Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate
Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger
The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8. ⟨hal-00159007⟩
Time frequency analysis of impact-echo signals : numerical modelling and experimental validation
O. Abraham, C. Leonard, P. Cote, Bogdan Piwakowski
Materials Journal, 2000, 97, pp.645-657. ⟨hal-00250444⟩