Publicaciones

Affichage de 4281 à 4290 sur 16055


  • ART

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, Joff Derluyn, Stefan Degroote, Marianne Germain, Filip Gucmann, Callum Middleton, James W Pomeroy, Martin Kuball

In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance...

International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩

  • ART

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

Mohammad A. Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière

Microelectronic Engineering, 2019, 209, pp.53-59. ⟨10.1016/j.mee.2019.03.011⟩. ⟨hal-03143596⟩

  • OUV

Surface Science Reports Editorial Board

Leonard Dobrzynski

74 (1), page ii, 2019, ISSN 0167-5729. ⟨10.1016/S0167-5729(19)30005-6⟩. ⟨hal-04071434⟩

  • ART

InP Series-like Transferred Electron Device for CW Submillimeter-wave Power Sources

Christophe Dalle

Journal of Computational Electronics, 2019, 18 (1), pp.155-163. ⟨10.1007/s10825-018-1261-2⟩. ⟨hal-02353179⟩

  • ART

Differential passive microwave planar resonator-based sensor for chemical particle detection in polluted environments

Hamida Hallil, Prince Bahoumina, Katrin Pieper, Jean-Luc Lachaud, Dominique Rebière, Aymen Abdelghani, Kamel Frigui, Stéphane Bila, Dominique Baillargeat, Qing Zhang, Philippe Coquet, Emmanuelle Pichonat, Henri Happy, Corinne Dejous

This paper presents an inkjet-printed differential passive microwave planar resonator-based sensor for toxic vapor detection at room temperature. Two devices are presented, with 5 (D1) and 50 (D2) layers of composite sensitive film (PEDOT:PSS-MWCNTs). Each one consists of two band-pass resonators...

IEEE Sensors Journal, 2019, 19 (4), pp.1346-1353. ⟨10.1109/JSEN.2018.2881487⟩. ⟨hal-01999525⟩