Publicaciones

• ART

Unsteady flows measurements using a calorimetric wall shear stress micro-sensor

Cécile Ghouila-Houri, Abdelkrim Talbi, Romain Viard, Quentin Gallas, Eric Garnier, Alain Merlen, Philippe Pernod

A microscale low power high temperature gradient calorimetric (HTGC) sensor measuring both mean and fluctuating bidirectional wall shear stress is presented. The micromachined sensor is composed of three free-standing 3 µm × 1 mm micro-wires mechanically supported using perpendicular micro-bridges...

Experiments in Fluids, 2019, 60 (4), pp.1-10. ⟨10.1007/s00348-019-2714-5⟩. ⟨hal-02476029⟩

• ART

Electron Transport through Self-Assembled Monolayers of Tripeptides

Evgeniy Mervinetsky, Israel Alshanski, Stéphane Lenfant, David Guérin, L. Medrano Sandonas, Arezoo Dianat, Israel Yitzchaik, Rafael Gutierrez, Gianaurelio Cuniberti, Israel Hurevich, S. Yitzchaik, Dominique Vuillaume

We report how the electron transport through a solid-state metal/Gly-Gly-His tripeptide (GGH) monolayer/metal junction and the metal/GGH work function are modified by the GGH complexation with Cu2+ ions. Conducting AFM is used to measure the current-voltage histograms. The work function is...

Journal of Physical Chemistry C, 2019, 123 (14), pp.9600-9608. ⟨10.1021/acs.jpcc.9b01082⟩. ⟨hal-02128012⟩

• THESE

Contribution au BIST in-situ : intégration sur silicium d’un banc de caractérisation en bruit en bande D, In-situ BIST contribution: silicon integration of a D-band noise characterization bench

Simon Bouvot

Les progrès des technologies Silicium permettent aujourd’hui de concevoir des circuits électroniques fonctionnant en bande de fréquence millimétrique, grâce à des composants de plus en plus performants. Ces évolutions sont possibles grâce aux performances des transistors, dont les fréquences de..., The progress of the silicon technologies allows today the design of electronic circuits working in the millimeter-wave frequency band, thanks to more and more efficient components. These evolutions are possible thanks to the performances of transistors, which operating frequencies beyond 300 GHz....

Sciences de l'ingénieur [physics]. Université de Lille, 2019. Français. ⟨NNT : ⟩. ⟨tel-03195394⟩

• ART

EM Monitoring and classification of IEMI and protocol-based attacks on IEEE 802.11n communication networks

Jonathan Villain, Virginie Deniau, Anthony Fleury, Eric Pierre Simon, Christophe Gransart, Raouf Kousri

The development of connected devices and their daily use are today at the origin of the omnipresence of Wi-Fi wireless networks. However, these Wi-Fi networks are often vulnerable, and can be used by malicious people to disturb services, intercept sensitive data or to gain access to system. In...

IEEE Transactions on Electromagnetic Compatibility, 2019, 61 (6), pp.1771-1781. ⟨10.1109/TEMC.2019.2900262⟩. ⟨hal-02097786⟩

• ART

Doping as a strategy to tune color of 2D colloidal nanoplatelets

Marion Dufour, Eva Izquierdo, Clément Livache, Bertille Martinez, Mathieu G Silly, Thomas Pons, Emmanuel Lhuillier, Christophe Delerue, Sandrine Ithurria

Among colloidal nanocrystals, 2D nanoplatelets (NPL) made of II-VI compounds, appear as a special class of emitters with especially narrow photoluminescence signal. However the PL signal in the case of NPL is only tunable by discrete step. Here we demonstrate that doping is a viable path to finely...

ACS Applied Materials & Interfaces, 2019, 11 (10), pp.10128-10134. ⟨10.1021/acsami.8b18650⟩. ⟨hal-02030568⟩

• THESE

Growth and transfer of graphene and hexagonal boron nitride by chemical vapor deposition : applications to thermally efficient flexible electronics, Croissance et transfert de graphène et nitrure de bore hexagonal : applications thermiques pour l'électronique flexible

Théo Levert

A major challenge is to find a way to grow those materials in order to achieve an easy and economically attractive way to produce large area of those materials with a good quality. Another challenge is to transfer those materials on substrate compatible with electronics (mainly SiO2). We will focus..., L'électronique flexible est devenue un sujet au cœur des recherches actuelles. Dans ce but, plusieurs matériaux ont été utilisés tels que le PEN, PET ou le polyimide (PI). Ces matériaux présentent une bonne flexibilité et une compatibilité chimique avec les différents procédés utilisés en...

Micro and nanotechnologies/Microelectronics. Université de Lille, 2019. English. ⟨NNT : 2019LILUI007⟩. ⟨tel-03621668⟩

• THESE

Study and development of a road collision avoidance system based on ultra wide-band radar for obstacles detection and identification dedicated to vulnerable road users, Étude et développement d'un dispositif routier d'anticollision basé sur un radar ultra large bande pour la détection et l'identification notamment des usagers vulnérables

Rahmad Sadli

In this thesis work, we focused on the study and development of a system identification using UWB-Ultra-Wide-Band short range radar to detect the objects and particularly the vulnerable road users (VRUs) that have low RCS-Radar Cross Section- such as cyclist and pedestrian. This work is composed of..., Dans ce travail de thèse, nous présentons nos travaux qui portent sur l’identification des cibles en général par un radar Ultra-Large Bande (ULB) et en particulier l’identification des cibles dont la surface équivalente radar est faible telles que les piétons et les cyclistes. Ce travail se...

Signal and Image processing. Université de Valenciennes et du Hainaut-Cambresis, 2019. English. ⟨NNT : 2019VALE0005⟩. ⟨tel-02937258⟩

• COMM

Integrated Photonic Crystal Cavity for Terahertz Waves on a Free-Standing Silicon Platform

Mattias Verstuyft, Elias Akiki, Guillaume Ducournau, Benjamin Walter, Marc Faucher, Estelle Mairiaux, Jean-Francois Lampin, Mathias Vanwolleghem, Bart Kuyken

Optical Terahertz Science and Technology (OTST'19), 10-15 March, Santa Fe, NM, USA, Mar 2019, Santa Fe, United States. ⟨hal-02409541⟩

• OUV

Emerging Nanostructured Materials for Energy and Environmental Science

Rabah Boukherroub, Rajendran Saravanan, Muhammad Naushad, Kumar Raju

Ed. Rabah Boukherroub; Ed. Rajendran Saravanan; Ed. Muhammad Naushad; Ed. Kumar Raju. 565 p., 2019, eISBN 978-3-030-04474-9. ⟨10.1007/978-3-030-04474-9⟩. ⟨hal-02376389⟩

• ART

Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devices

Kutsal Bozkurt, Orhan Özdemir, Neslihan Ayarci Kuruoğlu, Bandar Alshehri, Karim Dogheche, Quentin Gaimard, Abderrahim Ramdane, El Hadj Dogheche

Investigation of structural quality (by x-ray diffraction) and analysis of defects and interfaces in epitaxial layers (by transmission electron microscopy (TEM)) have been performed on InGaN/GaN multiple quantum wells (MQWs) LED structure. Using energy dispersive x-ray analysis attached to the TEM...

Journal of Physics D: Applied Physics, 2019, 52 (10), pp.105102. ⟨10.1088/1361-6463/aaf941⟩. ⟨hal-03143598⟩