Publicaciones

• Communication dans un congrès

Terahertz wireless communications using photonic and electronic devices

Guillaume Ducournau, P. Szriftgiser, F. Pavanello, P. Latzel, Mohammed Zaknoune, Emilien Peytavit, D. Bacquet, Jean-Francois Lampin

18th International Conference on Transparent Optical Networks (ICTON), Jul 2016, Trento, Italy. ⟨10.1109/ICTON.2016.7550375⟩. ⟨hal-03286179⟩

• Communication dans un congrès

Synthesis and characterization of BNT thin films prepared by sol-gel method

Sara Abou Dargham, Freddy Ponchel, Youssef Zaatar, Jamal Assaad, Denis Remiens, Doumit Zaouk

Polycrystalline piezoelectric lead-free Bi0.5Na0.5TiO3 (abbreviated as BNT) thin films were deposited on Pt/TiO2/SiO2/Si substrates by an optimized Sol-Gel process. The phase structure and morphology of the as-prepared product were examined by X-ray diffraction (XRD), Raman spectroscopy and...

12th International Conference on Nanosciences & Nanotechnologies & 8th International Symposium on Flexible Organic Electronics, NN15 & ISFOE15, Jul 2015, Thessaloniki, Greece. pp.810-815, ⟨10.1016/j.matpr.2016.02.013⟩. ⟨hal-03586629⟩

• Article dans une revue

Combining combing and secondary ion mass spectrometry to study DNA on chips using ¹³C and ¹⁵N labeling

Armelle Cabin-Flaman, Anne-Francoise Monnier, Yannick Coffinier, Jean-Nicolas Audinot, David Gibouin, Tom Wirtz, Rabah Boukherroub, Henri-Noël Migeon, Aaron Bensimon, Laurent Jannière, Camille Ripoll, Victor Norris

Dynamic secondary ion mass spectrometry ( D-SIMS) imaging of combed DNA - the combing, imaging by SIMS or CIS method - has been developed previously using a standard NanoSIMS 50 to reveal, on the 50 nm scale, individual DNA fibers labeled with different, non-radioactive isotopes in vivo and to...

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 5/3]

Raffaele Pisano

2016. ⟨hal-04511019⟩

• Article dans une revue

High Electron Confinement under High Electric Field in RF GaN-on-Silicon HEMTs

F Medjdoub, Riad Kabouche, Ezgi Dogmus, Astrid Linge, Malek Zegaoui

We report on AlN/GaN high electron mobility transistors grown on silicon substrate with highly optimized electron confinement under a high electric field. The fabricated short devices (sub-10-nm barrier thickness with a gate length of 120 nm) using gate-to-drain distances below 2 µm deliver a...

Electronics, 2016, 5 (1), pp.12. ⟨10.3390/electronics5010012⟩. ⟨hal-03028337⟩

• Communication dans un congrès

High-performance self-aligned InAs MOSFETs with L-shaped Ni-epilayer alloyed source/drain contact for future low-power RF applications

Mohamed Ridaoui, Alain-Bruno Fadgie-Djomkam, Matej Pastorek, Nicolas Wichmann, Abdelatif Jaouad, Hassan Maher, S. Bollaert

EuMIC 2016 - 11th European Microwave Integrated Circuits Conference, Oct 2016, Londres, United Kingdom. ⟨hal-02097329⟩

• Article dans une revue

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

K.K. Sossoe, Corentin Durand, L. Mathey, T. Alphazan, A. Sylla, M.M. Dzagli, A. Mohou, J.P. Nys, Maxime Berthe, C. Thieuleux, C. Coperet, J.P. Barnes, B. Grandidier

Microelectronic Engineering, 2016, 149, pp.125-128. ⟨10.1016/j.mee.2015.10.002⟩. ⟨hal-02084763⟩

• Article dans une revue

Channel sounding and indoor radio channel characteristics in the W-band

Maria-Teresa Martinez-Ingles, Davy Gaillot, Juan Pascual-Garcia, Jose-Maria Molina-Garcia-Pardo, Jose-Victor Rodriguez, Lorenzo Rubio, Leandro Juan-Llacer

This work presents directional radio channel measurements in the W-band using a commercial versatile channel sounder based on a vector network analyzer (VNA), capable of measuring scattering parameters from 75 to 500 GHz with frequency converters. The commercial setup has been modified by...

EURASIP Journal on Wireless Communications and Networking, 2016, 2016, pp.30,. ⟨10.1186/s13638-016-0530-7⟩. ⟨hal-03346227⟩

• Article dans une revue

Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels

Carlos Daher, Jeremie Torres, Ignacio Iñiguez-De-La-Torre, Philippe Nouvel, Luca Varani, Paul Sangaré, Guillaume Ducournau, Christophe Gaquière, Javier Mateos, Tomas González

IEEE Transactions on Electron Devices, 2016, 63 (1), pp.353 - 359. ⟨10.1109/TED.2015.2503987⟩. ⟨hal-01638570⟩

• Article dans une revue

Modeling of Fermi-level pinning alleviation with MIS contacts: n and pMOSFETs cointegration considerations-Part II

Julien Borrel, Louis Hutin, Olivier Rozeau, Marie-Anne Jaud, Sebastien Martinie, Magali Gregoire, Emmanuel Dubois, Maud Vinet

In this paper, the insertions of dielectric in metal/insulator/semiconductor contacts are considered via their associated impact on the dc and ac performances. Based on dc output characteristics projections, we found that single insertion and/or single-metal integration schemes are unlikely to...

IEEE Transactions on Electron Devices, 2016, 63 (9), pp.3419-3423. ⟨10.1109/TED.2016.2590826⟩. ⟨hal-03325006⟩