Publicaciones

• COMM

Effects of deposition parameters on the composition of Cu(In,Ga)Se2 thin films deposited by magnetron pulsed DC sputtering

Thomas Aviles, Jean-Pierre Vilcot

Industrial Cu(In,Ga)Se2 (CIGS) thin films formation process generally require two steps : 1) Cu-In-Ga precursors deposition 2) crystallization under selenium atmosphere (H2Se). Unfortunately, hydrogen selenide is very hazardous, being the most toxic selenium compound. Nevertheless, recent works...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964159⟩

• COMM

«Nanostructured Lead-Free La₂Ti₂O₇ Piezoelectric Islands Obtained by Ion-Beam Etching»

R. Desfeux, A. Ferri, S. Saitzek, Z. Shao, A. Bayart, J. Costecalde, D. Deresmes, David Troadec, Denis Remiens

no abstract

International Conference Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials – PFM 2014, 2014, Ekaterinburg, Russia. ⟨hal-01702958⟩

• OTHER

Photomélangeurs THz efficaces à base de collage de substrat métallique employant l'indium

Philipp Latzel

2014. ⟨hal-00981856⟩

• COMM

Highly tunable Fabry-Perot resonators using piezoelectric phononic crystals

Bertrand Dubus, Marie -Fraise Ponge, Anne-Christine Hladky, Jerome O. Vasseur, Mai Phamthi

Theoretical and experimental analyses of piezoelectric stacks submitted to periodical electrical boundary conditions via electrodes, are conducted. These structures are shown to exhibit Bragg band gaps which are switched on or off by setting electrodes in short or open circuit. Band gap frequency...

IEEE International Ultrasonics Symposium (IUS), Sep 2014, Chicago, United States. paper 5B-6, 154-157, ⟨10.1109/ULTSYM.2014.0039⟩. ⟨hal-03300131⟩

• ART

Threshold voltage study of scaled self-aligned In0.53Ga0.47As metal oxide semiconductor field effect transistor for different source/drain doping concentrations

A. Dehzangi, M.F. Mohd Razip Wee, Nicolas Wichmann, S. Bollaert, M.R. Buyong, B.Y. Majlis

A multi-gate n-type In0.53Ga0.47As metal oxide semiconductor field effect transistor is fabricated using the gate first self-aligned method and air-bridge technology with an 8 nm thick Al2O3 oxide layer. By scaling the gate length down to 200 nm, the effect of two different source/drain doping...

Micro and Nano Letters, 2014, 9, pp.180-183. ⟨10.1049/mnl.2014.0007⟩. ⟨hal-00969127⟩

• COMM

Patterning innovative conducting interpenetrating polymer network by dry etching

Alexandre Khaldi, Ali Maziz, Cedric Plesse, Caroline Soyer, Dominique Teyssié, Frederic Vidal, Eric Cattan

Interpenetrating polymer networks, as biomimetic actuators, can become successful actuators in the field of microsystems providing they are compatible with micro-technologies. In this paper, we report a novel material synthesized from poly(3,4-ethylenedioxythiophene) and polyethylene oxide)/nitrile...

IEEE/ASME International Conference on Advanced Intelligent Mechatronics, AIM 2014, 2014, Besançon, France. ⟨10.1109/AIM.2014.6878282⟩. ⟨hal-01058046⟩

• ART

Control of the ionization state of three single donor atoms in silicon

B. Voisin, M. Cobian, X. Jehl, M. Vinet, Yann-Michel Niquet, Christophe Delerue, Silvano de Franceschi, M. Sanquer

By varying the front-gate and the substrate voltages in a short silicon-on-insulator trigate field-effect transistor, we control the ionization state of three arsenic donors. We obtain good quantitative agreement between three-dimensional electrostatic simulations and experiment for the control...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, pp.161404. ⟨10.1103/PhysRevB.89.161404⟩. ⟨hal-00981141⟩

• ART

Optomechanic interaction in a corrugated phoxonic nanobeam cavity

Mourad Oudich, Said El-Jallal, Yan Pennec, Bahram Djafari-Rouhani, Jordi Gomis-Bresco, Daniel Navarro-Urrios, Clivia M. Sotomayor Torres, Alejandro Martínez, Abdelkader Makhoute

The interaction between phonons and photons is investigated theoretically in a phoxonic cavity inside a corrugated nanobeam waveguide presenting band gaps for both electromagnetic and elastic waves. The structure is made by drilling periodic holes on a silicon nanobeam with lateral periodic stubs...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89, 245122, 9 p. ⟨10.1103/PhysRevB.89.245122⟩. ⟨hal-01015199⟩

• ART

Silicon-microtube scaffold decorated with anatase TiO2 as a negative electrode for a 3D litium-ion microbattery

Etienne Eustache, Pascal Tilmant, Laurence Morgenroth, Pascal Roussel, Gilles Patriarche, David Troadec, Nathalie Rolland, Thierry Brousse, Christophe Lethien

An optimized scaffold based on silicon microtubes is designed to increase the surface capacity of 3D lithium-ion microbatteries. High-depth, mechanically robust microstructures are fabricated using microelectronic facilities. Conformal deposition of anatase TiO2 is achieved using atomic layer...

Advanced Energy Materials, 2014, 4, 1301612, 11 p. ⟨10.1002/aenm.201301612⟩. ⟨hal-00999999⟩

• ART

Sub-THz characterisation of monolayer graphene

Ehsan Dadrasnia, Sujitha Puthukodan, Vinod V. K. Thalakkatukalathil, Horacio Lamela, Guillaume Ducournau, Jean-Francois Lampin, Frédéric Garet, Jean-Louis Coutaz

We explore the optical and electrical characteristics of monolayer graphene by using pulsed optoelectronic terahertz time-domain spectroscopy in the frequency range of 325-500 GHz based on fast direct measurements of phase and amplitude. We also show that these parameters can, however, be measured...

Journal of Spectroscopy, 2014, 2014, 601059, 6 p. ⟨10.1155/2014/601059⟩. ⟨hal-01044860⟩