Publicaciones

Affichage de 6651 à 6660 sur 16164


  • Communication dans un congrès

CIGSe absorber layers deposition by single target magnetron sputtering

R. Meunier, S. Fabert, M. Ricci, P.Y. Thoulon, Thomas Aviles, Jean-Pierre Vilcot, Alain Lafond, Michèle Carette, Pierre-Yves Jouan, Marie-Paule Besland

In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling...

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964175⟩

  • Communication dans un congrès

Structure de bande de chaînes atomiques harmoniques et anharmoniques couplées

Bertrand Dubus, Jerome O. Vasseur, N. Swinteck, K. Muralidharan, P. Deymier

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUS1 : Acoustique Ultrasonore, papier CFA2014/95, 1240-1245. ⟨hal-00978392⟩

  • Communication dans un congrès

Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio, D. Vignaud

4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩

  • Proceedings/Recueil des communications

Note su Scienza e Tecnica (Notes on Science and Technique)

Raffaele Pisano, Danilo Capecchi

Proceedings of 27th and 29th annual SISFA Conferences Societá Italiana degli Storici della Fisica e dell'Astronomia, Aracne, pp.115-124, 2014, 978-88-548-7206-6. ⟨10.4399/978885487206610⟩. ⟨hal-04512964⟩

  • Article dans une revue

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based...

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩