Publicaciones

Affichage de 6681 à 6690 sur 16387


  • Communication dans un congrès

Forward V-band Vector Network Analyzer Based on a Modified Six-port Technique

Kamel Haddadi, Tuami Lasri

A V-band forward network analyzer based on a modified six-port technique is proposed for the measurement of complex reflection (S-11) and transmission (S-21) coefficients. The millimeter-wave part of the system is implemented on a thin alumina ceramic substrate. The measurement performance is...

2015 IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2015, 9th IEEE Radio & Wireless Week, RWW 2015, Jan 2015, San Diego, CA, États-Unis. pp.23-25, ⟨10.1109/WISNET.2015.7127400⟩. ⟨hal-03224666⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 4/3]

Raffaele Pisano

2015. ⟨hal-04511035⟩

  • Article dans une revue

Ultrasonic Tomography of Nonmixing Fluid Flows

P I Pyl 'Nov, P I Krutyansky, V I Kutlubaeva, Farzam Zoueshtiagh, P I Chainais, V I Herman, Philippe Pernod

An ultrasonic method for simultaneous measurement of two-dimensional distributions of compositions and flow velocities in a system of two nonmixing fluids is proposed and implemented. The method is based on tomographic reconstruction of images of scalar and vector objects using a rectangular system...

Physics of Wave Phenomena, 2015, 23, pp.273 - 278. ⟨10.3103/S1541308X15040056⟩. ⟨hal-01433710⟩

  • Article dans une revue

Compact Modeling of Single Electron Memory Based on Perceptron Designs

Aïmen Boubaker, Abdelghaffar Nasri, Adel Kalboussi, B. Hafsi

Journal of Materials Science and Engineering, 2015, 04 (05), ⟨10.4172/2169-0022.1000187⟩. ⟨hal-04422399⟩

  • Communication dans un congrès

Characterization of flexible CMOS technology tranferred onto a metallic foil

Justine Philippe, Aurelien Lecavelier Des Etangs-Levallois, Philip Latzel, Francois Danneville, J.F. Robillard, Daniel Gloria, Emmanuel Dubois

In this work we demonstrate a method to transfer high-performance industrial CMOS circuits thinned down to 5.7 mu m and bond onto a 25-mu m-thick stainless steel foil with a 800-nm-thick indium layer. The bonding is performed at the temperature of 100 degrees C with an applied pressure of 1.2 bar....

2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Jan 2015, Bologna, Italy. ⟨10.1109/ULIS.2015.7063747⟩. ⟨hal-03272691⟩