Publicaciones

• ART

0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune, Etienne Okada, Estelle Mairiaux, Yannick Roelens, Damien Ducatteau, Peter Frijlink, Marc Rocchi, Hassan Maher

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and...

IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩. ⟨hal-00955679⟩

• ART

Fabrication of superhydrophobic and highly oleophobic silicon-based surfaces via electroless etching method

Thi Phuong Nhung Nguyen, Renaud Dufour, Vincent Thomy, Vincent Senez, Rabah Boukherroub, Yannick Coffinier

This study reports on a simple method for the preparation of superhydrophobic and highly oleophobic nanostructured silicon surfaces. The technique relies on metal-assisted electroless etching of silicon in sodium tetrafluoroborate (NaBF4) aqueous solution. Then, silver particles were deposited on...

Applied Surface Science, 2014, 295, pp.38-43. ⟨10.1016/j.apsusc.2013.12.166⟩. ⟨hal-00946706⟩

• ART

On the origin of increased sensitivity and mass resolution using silicon masks in MALDI

Laurent Diologent, Julien Franck, Maxence Wisztorski, A. Treizebre, Cristian Focsa, Isabelle Fournier, Michael Ziskind

Since its development, MALDI has proved its performance in the analysis of intact biomolecules up to high molecular weights, regardless of their polarity. Sensitivity of MALDI instruments is a key point for breaking the limits of observing biomolecules of lower abundances. Instrumentation is one...

Analytical Chemistry, 2014, 86, pp.1404-1413. ⟨10.1021/ac401329r⟩. ⟨hal-00946711⟩

• ART

Comparison of shallow-mesa InAs/AlSb HEMTs with and without early-protection for long-term stability against Al(Ga)Sb oxidation

E. Lefebvre, G. Moschetti, M. Malmkvist, L. Desplanque, X. Wallart, J. Grahn

The fabrication process of InAs/AlSb high electron mobility transistors (HEMTs) has been improved by depositing, after the shallow-mesa isolation of the active area, a thin SiNx-film on the exposed AlGaSb mesa floor. Devices with and without this early-protection against Al(Ga)Sb oxidation have...

Semiconductor Science and Technology, 2014, 29, 035010, 7p. ⟨10.1088/0268-1242/29/3/035010⟩. ⟨hal-00941533⟩

• COMM

Multiuser phase coded costas signals with improved cross-correlation and partial cross-ambiguity properties

Nadjah Touati, Charles Tatkeu, Atika Rivenq, Thierry Chonavel

Costas codes are a variant of frequency hopping codes that achieve the «thumbtack» auto-ambiguity function needed in radar applications. However, they may show poor cross- ambiguity properties when selected and assigned randomly which makes them poorly adapted to multiuser radar applications. In...

RADAR 2014, International Radar Conference, Oct 2014, Lille, France. 6p, ⟨10.1109/RADAR.2014.7060452⟩. ⟨hal-01213623⟩

• ART

Feasibility of a high bit rate power line communication between an inverter and a motor

Virginie Degardin, Khaled Kilani, Lamine Koné, M. Lienard, Pierre Degauque

In the aerospace domain, more electrical aircraft will have to face a drastic issue in the future, in relation to an increase in the number of wires and connectors, which impact weight and system reliability. A possible solution could be using power-line communications (PLC). In this paper, we...

IEEE Transactions on Industrial Electronics, 2014, 61, pp.4816-4823. ⟨10.1109/TIE.2013.2293697⟩. ⟨hal-00969137⟩

• ART

Longitudinal and transversal polarization switching in strained ferroelectrics

Laurent Baudry, Igor A. Luk'Yanchuk, A. Razumnaya

Using the multicomponent Landau-Devonshire functional we study the field-induced polarization switching in c-oriented ferroelectric phase of epitaxial perovskite film and found that two different regimes are possible: (i) longitudinal switching with change of the polarization modulus and (ii)...

Ferroelectrics, 2014, 13th International Meeting on Ferroelectricity, 461 (1), pp.22-28. ⟨10.1080/00150193.2014.889528⟩. ⟨hal-01044688⟩

• COMM

A 1D optomechanical crystal with a complete phononic band gap

Jordi Gomis-Bresco, Daniel Navarro Urrios, Mourad Oudich, Said El-Jallal, Amadeu Griol, Daniel Puerto, Emigdio Chávez-Ángel, Yan Pennec, Bahram Djafari-Rouhani, Francesc Alzina, Alejandro Martinez, Clivia Sotomayor-Torres

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015239⟩

• COMM

Engineering of oxide based resistive switching for neuromorphic computing

F. Alibart, Selina La Barbera, G. Sassine, N. Najjari, Dominique Vuillaume

Journées Nationales du GdR OXYFUN " Oxydes fonctionnels : du matériau au dispositif ", 2014, Autrans, France. ⟨hal-01055005⟩

• COMM

Digital radio frequency signal generation towards ultimate transmitters

Antoine Frappé

This invited paper exposes our latest developments in the field of digital transmitters by focusing on digital and mixed-signal processing blocks, such as delta-sigma modulators, high-speed interpolation filters and digital-to-RF converters. The goal is to demonstrate that radio-frequency signal...

2014 International Symposium on Fundamentals of Electrical Engineering (ISFEE), Nov 2014, Bucharest, Romania. pp.1-5, ⟨10.1109/ISFEE.2014.7050563⟩. ⟨hal-03377050⟩