Publicaciones

• Article dans une revue

GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers

Yvon Cordier, Éric Frayssinet, Magdalena Chmielowska, Maud Nemoz, Aimeric Courville, Philippe Vennéguès, P. de Mierry, Sebastien Chenot, Julien Camus, Keltouma Aït Aïssa, Quentin Simon, Laurent Le Brizoual, Mohamed Abdou Djouadi, N. Defrance, Marie Lesecq, Philippe Altuntas, Adrien Cutivet, Alain Agboton, Jean-Claude de Jaeger

In the present paper, we describe the development of new AlN seed layers obtained by combining molecular beam epitaxy and low temperature physical vapour deposition (magnetron sputtering). It is shown that it is possible to grow thick AlN seed layers with a good in-plane crystal ordering. GaN based...

Physica Status Solidi C: Current Topics in Solid State Physics, 2014, 11 (3-4), pp.498-501. ⟨10.1002/pssc.201300453⟩. ⟨hal-00966112⟩

• Article dans une revue

Ferroelectric thin films working at microwave frequency for reconfigurable devices on silicon substrate: performances comparison between BST, PST

Freddy Ponchel, Denis Remiens, Areski Ghalem, Tuami Lasri

The dielectric microwave performance of BST and PST films is studied via tunability. The films are deposited onto silicon wafer with high resistivity using radio frequency magnetron sputtering with an in situ process for BST films and ex situ for PST films. In order to improve the crystalline...

International Journal of Materials Engineering Innovation, 2014, 5 (4), pp.327. ⟨10.1504/IJMATEI.2014.066857⟩. ⟨hal-03525889⟩

• Communication dans un congrès

Mechanical characterization of thin films and interfaces using the colored picosecond ultrasonic technique

Arnaud Devos, A. Le Louarn, Patrick Emery

5th Photovoltaic Technical Conference 'Thin Film and Advanced Silicon Solutions', PVTC 2014, 2014, Aix-en-Provence, France. ⟨hal-00989527⟩

• Chapitre d'ouvrage

Preface. A Brief History of a Concept (Agamenon Oliveira's Author) [Preface]

Raffaele Pisano

A History of the Work Concept, Springer International Publishing, pp.v-vi, 2014, 978-94-007-7704-0. ⟨10.1007/978-3-031-12195-1⟩. ⟨hal-04509483⟩

• Autre publication scientifique

Etude d'un système de localisation 3-D haute précision basé sur les techniques de transmission ULB à basse consommation d'énergie pour les objets mobiles communicants

Kobenan Ignace Kossonou

2014. ⟨hal-00994836⟩

• Communication dans un congrès

Impact of spacing between array elements on the performances of diversity schemes in tunnels

M. Lienard, Jose-Maria Molina-Garcia-Pardo, C. Sanchis-Borras, Pierre Degauque

To increase channel capacity in tunnels, MIMO seems to be a promising technique despite the low angular spread of the rays. Indeed, for transmitting frequencies on the order or larger than 1 GHz, the tunnel behaves as an oversized waveguide and the concept of spatial diversity can be replaced by...

18th International Conference on Circuits, Systems, Communications and Computers, CSCC 2014, 2014, Santorini Island, Greece. pp.30-33. ⟨hal-01055044⟩

• Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩

• Article dans une revue

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Issam Hasnaoui, Alexandre Pottrain, Thomas Lacave, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull...

Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩. ⟨hal-01055077⟩

• Communication dans un congrès

Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance

Mohamed Salah Khenissa, D. Mele, Mohamed Moez Belhaj, Ivy Colambo, Emiliano Pallecchi, Dominique Vignaud, Henri Happy

4th Graphene Conference, Graphene 2014, May 2014, Toulouse, France. 2 p. ⟨hal-00962375⟩

• Article dans une revue

Epitaxial hexagonal boron nitride on Ir(111) : a work function template

Fabian Schulz, Robert Drost, Sampsa K. Hämäläinen, Thomas Demonchaux, Ari P. Seitsonen, Peter Liljeroth

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other two-dimensional materials to templating growth of molecular layers. We have studied the structure of...

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 89 (23), pp.2354293. ⟨10.1103/PhysRevB.89.235429⟩. ⟨hal-01044795⟩