Publicaciones

• Article dans une revue

Power performance of AlGaN/GaN high-electron-mobility transistors on (110) silicon substrate at 40 GHz

A. Soltani, J.C. Gerbedoen, Y. Cordier, D. Ducatteau, Michel Rousseau, M. Chmielowska, M. Ramdani, Jean-Claude de Jaeger

IEEE Electron Device Letters, 2013, 34, pp.490-492. ⟨10.1109/LED.2013.2244841⟩. ⟨hal-00809856⟩

• Autre publication scientifique

Design, fabrication and characterization of MEMS-based oscillating AFM probes

Zhuang Xiong

2013. ⟨hal-00799260⟩

• Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM...

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

• Chapitre d'ouvrage

Electrochemical detection

T. Houssin, V. Senez

Bridle H. Waterborne pathogens - Detection methods and applications, Academic Press/Elsevier, chapter 6, 151-192, 2013, 978-0-444-59543-0. ⟨hal-00878470⟩

• Article dans une revue

Effect of surface passivation by SiN/SiO2 of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method

M. Gassoumi, H. Mosbahi, M.A. Zaidi, Christophe Gaquière, H. Maaref

Semiconductors, 2013, 47, pp.1002-1005. ⟨hal-00806585⟩

• Article dans une revue

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

C. Rolland, P. Caroff, Christophe Coinon, X. Wallart, R. Leturcq

Applied Physics Letters, 2013, 102, pp.223105-1-4. ⟨10.1063/1.4809576⟩. ⟨hal-00871968⟩

• Article dans une revue

High surface capacity Li-ion all solid state 3D microbattery based on anatase TiO2 deposited by ALD on silicon microstructures

E. Eustache, P. Tilmant, L. Morgenroth, P. Roussel, N. Rolland, Thierry Brousse, C. Lethien

ECS Transactions, 2013, 58, pp.119-129. ⟨10.1149/05810.0119ecst⟩. ⟨hal-00877701⟩

• Proceedings/Recueil des communications

On Lagrangian in Maxwell's electromagnetic theory

Raffaele Pisano

Scientiarum Historia VI, The Federate University of Rio de Janeiro Press, pp.44-59, 2013, ISSN 2176-123X. ⟨hal-04517937⟩

• Article dans une revue

Inline high frequency ultrasonic particle sizer

Fabrice Lefebvre, J. Petit, Georges Nassar, P. Debreyne, Guillaume Delaplace, Bertrand Nongaillard

This paper reports the development of a new method of particle sizing in a liquid. This method uses high frequency focused ultrasounds to detect particles crossing the focal zone of an ultrasonic sensor and to determine their size distribution by processing the reflected echoes. The major advantage...

Review of Scientific Instruments, 2013, 84 (7), pp.075101. ⟨10.1063/1.4811847⟩. ⟨hal-00877657⟩

• Article dans une revue

Low-temperature crystallization of high performance Pb0.4Sr 0.6TiO3 films compatible with the current silicon-based microelectronic technology

K. Li, Denis Remiens, X.L. Dong, J. Costecalde, N. Sama, T. Li, G. Du, Y. Chen, G.S. Wang

Applied Physics Letters, 2013, 102, 212901, 4 p. ⟨10.1063/1.4807792⟩. ⟨hal-00877663⟩