Publicaciones

• Communication dans un congrès

Passivation Al2O3 par ALD sur p-Si Cz

M. Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, M. Gauthier, N. Le Quang

3èmes Journées Nationales du Photovoltaïque, JNPV 2013, 2013, Dourdan, France. ⟨hal-00940902⟩

• Communication dans un congrès

STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

François Lecourt, Yannick Douvry, Marie Lesecq, N. Defrance, Alain Agboton, Etienne Okada, Virginie Hoel, Jean-Claude de Jaeger, Magdalena Chmielowska, Stephanie Rennesson, Sebastien Chenot, Yvon Cordier, L. Lacheze, Salhi Bouzid, Peter Frijlink

Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France. ⟨hal-00941541⟩

• Communication dans un congrès

High spectral purity microwave and terahertz oscillator

Gwennaël Danion, Goulc'Hen Loas, Ludovic Frein, Cyril Hamel, Anthony Carré, Steve Bouhier, Marc Vallet, Marc Brunel, Antoine Rolland, Mehdi Alouini, François Bondu, Alexandre Beck, Guillaume Ducournau, Mohamed Zaknoune, Christophe Coinon, Xavier Wallart, Emilien Peytavit, Tahsin Akalin, Jean-Francois Lampin, Frédéric Cleva, Jean-Pierre Coulon, Mourad Merzougui, Alain Brillet, Gregoire Pillet, Loïc Morvan, Ghaya Baili, Jérôme Bourderionnet

We report on the design of an ultra stable microwave/THz oscillator and on the realization and the characterization of its laser source. The tunable oscillator is expected to show below -150 dB rad2/Hz phase instability at an offset frequency of 10 kHz for a 30 GHz carrier frequency, as well as 18...

6th Joint IEEE International Frequency Control Symposium/European Frequency and Time Forum, IFCS-EFTF 2013, 2013, Prague, Czech Republic. pp.40-42, ⟨10.1109/EFTF-IFC.2013.6702198⟩. ⟨hal-00944028⟩

• Communication dans un congrès

A high resolution nonvolatile analog memory ionic devices

L. Gao, F. Alibart, D.B. Strukov

4th Annual Non-Volatile Memories Workshop, NVMW 2013, 2013, San Diego, CA, United States. paper 57, 1-2. ⟨hal-00827380⟩

• Communication dans un congrès

Silicon nanotweezers with a microfluidic cavity for the real time characterization of DNA damage under therapeutic radiation beams

G. Perret, P.T. Chiang, T. Lacornerie, M. Kumemura, N. Lafitte, Hervé Guillou, L. Jalabert, E. Lartigau, T. Fujii, F. Cleri, H. Fujita, D. Collard

35th Annual International Conference of the IEEE Engineering in Medicine and Biology Society, EMBC 2013, 2013, Osaka, Japan. paper SuA07.2, 6820-6820. ⟨hal-00909944⟩

• Communication dans un congrès

Analysis of ultrasonic reflection coefficient : application to adhesion measurement at solid/fluid or solid/solid interfaces

N. Collier, Dorothée Debavelaere-Callens, Pierre Campistron, Julien Carlier, Bertrand Nongaillard, Guillaume Delaplace

IEEE International Ultrasonics Symposium, IUS 2013, 2013, Prague, Czech Republic. ⟨hal-00944056⟩

• Article dans une revue

Corrosion inhibition of carbon steel in 0.5 M NaCl aqueous solution by humid air plasma treatment

N. Ghali, A. Addou, B. Mutel, B. Benstaali, F. Bentiss, J.L. Brisset

European Physical Journal: Applied Physics, 2013, 61, pp.30801-1-8. ⟨10.1051/epjap/2012120130⟩. ⟨hal-00800579⟩

• Article dans une revue

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the...

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩

• Article dans une revue

Electrowetting at a liquid metal-oxide-semiconductor junction

S. Arscott

A voltage polarity dependent, voltage-induced wetting transition is demonstrated using a liquid metal-oxide-semiconductor (MOS) junction. A droplet of mercury can be made to spread out on an oxidized silicon wafer upon the application of a voltage. The wetting is seen to depend on the doping type...

Applied Physics Letters, 2013, 103 (14), pp.144101-1-5. ⟨10.1063/1.4822308⟩. ⟨hal-00871933⟩

• Article dans une revue

Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

K. Pantzas, G. Patriarche, Éric Le Bourhis, David Troadec, A. Itawi, G. Beaudoin, I. Sagnes, A. Talneau

Applied Physics Letters, 2013, 103, pp.081901-1-4. ⟨10.1063/1.4817675⟩. ⟨hal-00872063⟩