Publicaciones

• Article dans une revue

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

N. Clement, X.L. Han, Guilhem Larrieu

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the...

Applied Physics Letters, 2013, 103 (26), pp.263504. ⟨10.1063/1.4858955⟩. ⟨hal-00922923⟩

• Article dans une revue

Electrowetting at a liquid metal-oxide-semiconductor junction

S. Arscott

A voltage polarity dependent, voltage-induced wetting transition is demonstrated using a liquid metal-oxide-semiconductor (MOS) junction. A droplet of mercury can be made to spread out on an oxidized silicon wafer upon the application of a voltage. The wetting is seen to depend on the doping type...

Applied Physics Letters, 2013, 103 (14), pp.144101-1-5. ⟨10.1063/1.4822308⟩. ⟨hal-00871933⟩

• Article dans une revue

Progressive multi-layer drop-casting of CdSe nanoparticles for photocurrent down shifing monitoring

Yannick Lambert, Di Zhou, Tao Xu, Odile Cristini, D. Deresmes, B. Grandidier, D. Stievenard

We investigated the spectroscopic photocurrent response of photovoltaic devices versus an increasing number of drop-casted CdSe nanoparticles onto planar and nanocones silicon p-i-n junctions. For all samples, a strong enhancement of the photocurrent in the UV range was detected as well as a...

Applied Physics Letters, 2013, 103 (5), pp.051102-1-4. ⟨10.1063/1.4816956⟩. ⟨hal-00871996⟩

• Article dans une revue

Exploring electronic structure of one-atom thick polycrystalline graphene films : a nano angle resolved photoemission study

J. Avila, I. Razado, S. Lorcy, R. Fleurier, E. Pichonat, D. Vignaud, X. Wallart, M.C. Asensio

The ability to produce large, continuous and defect free films of graphene is presently a major challenge for multiple applications. Even though the scalability of graphene films is closely associated to a manifest polycrystalline character, only a few numbers of experiments have explored so far...

Scientific Reports, 2013, 3, pp.2439-1-8. ⟨10.1038/srep02439⟩. ⟨hal-00871897⟩

• Communication dans un congrès

Electric charge band gaps in phononic crystals

S. Degraeve, C. Granger, Bertrand Dubus, Jerome O. Vasseur, Anne-Christine Hladky, M. Pham Thi

2nd International Conference on Phononic Crystals/Metamaterials, Phonon Transport and Optomechanics, PHONONICS 2013, 2013, Sharm El-Sheikh, Egypt. Paper PHONONICS-2013-0148, 120-121. ⟨hal-00881292⟩

• Communication dans un congrès

Ferroelectric metamaterial perfect absorber

J.P. Hao, Véronique Sadaune, L. Burgnies, Eric Lheurette, D. Lippens

7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2013, 2013, Bordeaux, France. Session IV.6, 3 p., published by Metamorphose-VI, CD-ISBN 978-952-67611-5-2. ⟨hal-00881302⟩

• Communication dans un congrès

Metallic structures for transformation acoustics and negative index phononic crystals

A.N. Norris, A.J. Nagy, J.L. Cipolla, N.H. Gokhale, Anne-Christine Hladky, Charles Croënne, Jerome O. Vasseur, Bertrand Dubus

7th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2013, 2013, Bordeaux, France. Special session III.3, 3 p., published by Metamorphose-VI, CD-ISBN 978-952-67611-5-2. ⟨hal-00881307⟩

• Communication dans un congrès

RF-MEMS reconfigurable GaAs MMICs and antennas for microwave/MM-wave applications

R. Malmqvist, R. Jonsson, C. Samuelsson, A. Gustafsson, S. Reyaz, D. Dancila, A. Rydberg, B. Grandchamp, S. Seok, M. Fryziel, P.A. Rolland, P. Rantakari, M. Lahti, T. Vaha-Heikkla, R. Baggen

This paper presents the results of some reconfigurable RF-MEMS switching circuits and antennas fabricated using GaAs MMIC and LTCC based processes. Wafer-level packaged GaAs RF-MEMS series and shunt switches demonstrating low losses (≤0.5 dB) up to 40 GHz are presented together with a compact Ka-...

International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9056, 83-88, ⟨10.1109/SMICND.2013.6688097⟩. ⟨hal-00922405⟩

• Communication dans un congrès

STARGAN : études de structures avancées de la filière nitrure de gallium (GaN)

François Lecourt, Yannick Douvry, Marie Lesecq, N. Defrance, Alain Agboton, Etienne Okada, Virginie Hoel, Jean-Claude de Jaeger, Magdalena Chmielowska, Stephanie Rennesson, Sebastien Chenot, Yvon Cordier, L. Lacheze, Salhi Bouzid, Peter Frijlink

Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France. ⟨hal-00941541⟩

• Communication dans un congrès

ANL-MEMS : Techniques d'imagerie acoustique non linéaire pour l'étude de la fiabilité des MEMS

Olivier Bou Matar, V. Aleshin, Abdelkrim Talbi, Huan Zhou, Nikolay Chigarev, Vitali Goussev, C. Ni, V. Tournat

Journées Nationales en Nanosciences et Nanotechnologies, J3N 2013, 2013, Marseille, France. ⟨hal-00940897⟩