Publicaciones

• COMM

Photomixing THz sources : mW level and kHz linewidth

Emilien Peytavit, Guillaume Ducournau, P. Szriftgiser, Alexandre Beck, Tahsin Akalin, Jean-Francois Lampin

European Microwave Week 2013, Workshops and Short Courses, W12, EuMC & EuMIC, Terahertz Technologies - From Materials to Devices and Their Applications, 2013, Nuremberg, Germany. ⟨hal-00878926⟩

• COMM

94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band

Issam Hasnaoui, Elodie Canderle, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on lastgeneration SiGe HBTs by extracting the input reflection hot Sparameter (...

8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-4, 400-403. ⟨hal-00922493⟩

• ART

Record combination of power-gain cut-off frequency and three-terminal breakdown voltage for GaN-on-silicon devices

F Medjdoub, B. Grimbert, D. Ducatteau, N. Rolland

Japanese Journal of Applied Physics, part 2 : Letters, 2013, 6, pp.044001-1-3. ⟨10.7567/APEX.6.044001⟩. ⟨hal-00809852⟩

• ART

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

J.C. Chacon-Torres, L. Wirtz, T. Pichler

ACS Nano, 2013, 7, pp.9249-9259. ⟨10.1021/nn403885k⟩. ⟨hal-00878430⟩

• ART

Theoretical and experimental evidence of Fano-like resonances in simple monomode photonic circuits

A. Mouadili, E.H. El Boudouti, A. Soltani, Abdelkrim Talbi, Abdellatif Akjouj, Bahram Djafari-Rouhani

A simple photonic device consisting of two dangling side resonators grafted at two sites on a waveguide is designed in order to obtain sharp resonant states inside the transmission gaps without introducing any defects in the structure. This results from an internal resonance of the structure when...

Journal of Applied Physics, 2013, 113 (16), pp.164101. ⟨10.1063/1.4802695⟩. ⟨hal-00819665⟩

• ART

The roles of biological interactions and pollutant contamination in shaping microbial benthic community structure

Haithem Louati, O. Ben Said, A. Soltani, P. Got, E. Mahmoudi, Cristiana Cravo-Laureau, Robert Duran, P. Aissa, O. Pringault

Biological interactions between metazoans and the microbial community play a major role in structuring food webs in aquatic sediments. Pollutants can also strongly affect the structure of meiofauna and microbial communities. This study aims investigating, in a non-contaminated sediment, the impact...

Chemosphere, 2013, 93 (10), pp.2535-2546. ⟨10.1016/j.chemosphere.2013.09.069⟩. ⟨hal-01631854⟩

• ART

Intrinsic bandgap of cleaved ZnO(110) surfaces

A. Sabitova, P. Ebert, A. Lenz, S. Schaafhausen, L. Ivanova, M. Dähne, A. Hoffmann, R.E. Dunin-Borkowski, A. Förster, B. Grandidier, H. Eisele

Applied Physics Letters, 2013, 102, pp.021608-1-4. ⟨10.1063/1.4776674⟩. ⟨hal-00796416⟩

• ART

Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels

Paul Sangare, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Iniguez-De-La-Torre, Ignacio Íñiguez-De-La-Torre, Jean-Francois Millithaler, Javier Mateos, Tomás González

The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both...

Journal of Applied Physics, 2013, 113 (3), pp.034305. ⟨10.1063/1.4775406⟩. ⟨hal-00796434⟩

• ART

Piezoresistance of nano-scale silicon up to 2 GPa in tension

U.K. Bhaskar, T. Pardoen, V. Passi, J.P. Raskin

Applied Physics Letters, 2013, 102, pp.031911-1-4. ⟨10.1063/1.4788919⟩. ⟨hal-00795970⟩

• ART

Effect of antimony on structure strained quantum well laser

Abdelkader Aissat, Farid Ykhlef, Said Nacer, Jean-Pierre Vilcot

This work consists of highly strained quantum well GaxIn1-xNyAs1-y-zSbz quaternary structure modeling. We have studied the effect nitrogen and antimony incorporation into ternary semiconductor III-V alloys. We found that incorporating nitrogen in the structure leads to a splitting of the conduction...

Journal of Optoelectronics and Advanced Materials, 2013, 15, pp.1185-1187. ⟨hal-00922579⟩