Publicaciones

• Communication dans un congrès

Polarization engineering of AlGaN/GaN HEMTs for high power applications at 40 GHz

Stéphanie Rennesson, François Lecourt, N. Defrance, M. Chmielowska, S. Chenot, Marie Lesecq, Virginie Hoel, Etienne Okada, Yvon Cordier, Jean-Claude de Jaeger

Joint 5th International Workshop on Silicon Carbide Hetero-Epitaxy and 5th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, HeteroSiC-WASMPE 2013, 2013, Nice, France. ⟨hal-00987957⟩

• Article dans une revue

High performance AlGaN metal-semiconductor-metal ultraviolet photo detectors

Sabah Benzeghda, Farida Hobar, Didier Decoster

In this paper, we present Al0.25Ga0.75N ultraviolet Schottky barrier photodetectors on Al2O3, that wasmodeled using The two-dimensional device simulator Silvaco and ATLAS. It was found that the device has verylow dark current, with the applied bias below 1 V, the dark current was below 16 pA and...

International Journal of Engineering Sciences and Research Technology, 2013, 2, pp.3333-3336. ⟨hal-00911234⟩

• Article dans une revue

Germanium growth orientation on SrTiO3 (001) 2 × 1 surface : role of surface reduction

J.J. Wang, I. Lefebvre

Journal of Physical Chemistry C, 2013, 117, pp.9887-9894. ⟨10.1021/jp4013976⟩. ⟨hal-00824530⟩

• Article dans une revue

Doped semiconductor nanocrystal junctions

Lukasz Borowik, Thuat Nguyen-Tran, Pere Roca I Cabarrocas, Thierry Melin

Semiconductor junctions are the basis of electronic and photovoltaic devices. Here, we investigate junctions formed from highly doped (ND 1020 1021cm 3) silicon nanocrystals (NCs) in the 2-50 nm size range, using Kelvin probe force microscopy experiments with single charge sensitivity. We show that...

Journal of Applied Physics, 2013, 114, 204305, 5 p. ⟨10.1063/1.4834516⟩. ⟨hal-00941624⟩

• Article dans une revue

Modeling of MEMS resonator piezoelectric disc by means of an equicharge current source method

L. Elmaimouni, F.E. Ratolojanahary, Jean-Etienne Lefebvre, J.G. Yu, A. Raherison, Tadeusz Gryba

Ultrasonics, 2013, 53, pp.1270-1279. ⟨10.1016/j.ultras.2013.03.011⟩. ⟨hal-00877662⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged...

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Communication dans un congrès

KPFM sur des transistors FET à base de nano-rubans de silicium fonctionnalisés pour la réalisation de détecteurs

S. Lenfant, K. Smaali, David Guérin, Thierry Melin, D. Vuillaume, L. Ordronneau, A. Carella, C. Celle, J.P. Simonato

16ème Forum des Microscopies à Sondes Locales, 2013, Spa, Belgique. papier OC26, 48-49. ⟨hal-00818716⟩

• Communication dans un congrès

Effect of pinch-off current leakage characteristics of AlGaN/GaN/Si HEMTs

H. Mosbahi, M. Gassoumi, H. Mejri, Christophe Gaquière, B. Grimbert, M.A. Zaidi, H. Maaref

European Materials Research Society Spring Meeting, E-MRS Spring 2013, Symposium L - Group III nitrides, 2013, Strasbourg, France. ⟨hal-00819698⟩

• Communication dans un congrès

[Invité] Interactions optomécaniques dans les cavités phoxoniques

Bahram Djafari-Rouhani, M. Oudich, Said El-Jallal, Yan Pennec

14èmes Journées Nano, Micro et Optoélectronique, JNMO 2013, 2013, Evian, France. ⟨hal-00819474⟩

• Chapitre d'ouvrage

Schottky source/drain MOSFETs

Emmanuel Dubois, Florent Ravaux, Zhenkun Chen, Nicolas Reckinger, Xiaohui Tang, Jean-Pierre Raskin, Maud Vinet, Louis Hutin

Deleonibus S. Intelligent integrated systems : technologies, devices and architectures, Pan Stanford Publishing, section 1, chapter 2, 55-96, 2013, 978-9-8144-1142-4. ⟨hal-00878461⟩