Publicaciones

• OTHER

Structure électronique et propriétés optiques de nanocristaux hétérogènes : théorie et modélisation

Sergio Carrillo

2012. ⟨hal-00799311⟩

• OTHER

Dispositif microfluidique utilisant la technologie d'électromouillage sur isolant dédié à la préparation d'échantillons pour des analyses biologiques : application au suivi en ligne de bioprocédés

Chang Wu

2012. ⟨hal-00799356⟩

• COMM

Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs

Elodie Canderle, Pascal Chevalier, A. Montagne, L. Moynet, Gregory Avenier, Pierre Boulenc, M. Buczko, Y. Carminati, J. Rosa, Christophe Gaquière, Alain Chantre

The influence of an additional annealing in the base/emitter module fabrication of state-of-the-art DPSA-SEG SiGe:C HBTs is studied in this paper. The objective of this annealing is to reduce the extrinsic base resistance R Bx which in previous studies appeared to limit f MAX of DPSA-SEG SiGe HBTs...

26th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2012, Sep 2012, Portland, OR, United States. pp.1-4, ⟨10.1109/BCTM.2012.6352650⟩. ⟨hal-00801192⟩

• COMM

Holistic modelling of heterogeneous embedded systems with high multi-discipline feedback : application to a precollision mitigation braking system

A. Leveque, François Pecheux, M.M. Louerat, H. Aboushady, F. Cenni, S. Scotti, A. Massouri, Laurent Clavier

Design, Automation & Test in Europe, DATE 2012, 2012, Dresden, Germany. pp.739-744. ⟨hal-00801059⟩

• COMM

A neuro-inspired memristive organic-nanoparticule synapse-transistor (synapstor)

F. Alibart, Stéphane Pleutin, David Guérin, Dominique Vuillaume, Olivier Bichler, Weisheng Zhao, Christian Gamrat

European Materials Research Society Spring Meeting, E-MRS Spring 2012, Symposium I : Biological applications for organic electronic devices, 2012, Strasbourg, France. ⟨hal-00797697⟩

• ART

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage...

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩

• COMM

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to...

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• COMM

Evaluación experimental de la técnica time-reversal para sistemas de gran ancho de banda en túneles

Concepcion Garcia Pardo, M. Lienard, Pierre Degauque, Jose Maria Molina Garcia-Pardo, Leandro Juan Llacer

XXVII Simposium Nacional de la Unión Científica Internacional de Radio, URSI 2012, 2012, Elche, España. pp.75-77. ⟨hal-00994829⟩

• ART

Acousto-optic couplings in two-dimensional phoxonic crystal cavities

Quentin Rolland, M. Oudich, Said El-Jallal, Samuel Dupont, Yan Pennec, Joseph Gazalet, Jean-Claude Kastelik, Gaëtan Lévêque, Bahram Djafari-Rouhani

Applied Physics Letters, 2012, 101, pp.061109-1-4. ⟨10.1063/1.4744539⟩. ⟨hal-00787416⟩

• ART

Influence of a superficial field of residual stress on the propagation of surface waves - Applied to the estimation of the depth of the superficial stressed zone

Marc Duquennoy, Mohammadi Ouaftouh, J. Deboucq, Jean-Etienne Lefebvre, Frédéric Jenot, Mohamed Ourak

Applied Physics Letters, 2012, 101, pp.234104-1-3. ⟨10.1063/1.4768434⟩. ⟨hal-00790364⟩