Publicaciones

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this...

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Article dans une revue

Analytical modeling of acoustic emission from buried or surface-breaking crack under stress

W. Ben Khalifa, K. Jezzine, G. Hello, Sébastien Grondel

Journal of Physics: Conference Series, 2012, 353, pp.012016-1-12. ⟨10.1088/1742-6596/353/1/012016⟩. ⟨hal-00790432⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-...

• Article dans une revue

Hysteretic magnetoresistance in stress controled magnetic memory device

Yannick Dusch, V. Rudenko, Nicolas Tiercelin, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2012, 2, pp.44-50. ⟨hal-00787359⟩

• Article dans une revue

Locating an individual quantum hall island inside a quantum ring

F. Martins, S. Faniel, M.G. Pala, Hermann Sellier, Serge Huant, L. Desplanque, X. Wallart, V. Bayot, B. Hackens

AIP Conference Proceedings, 2012, ISBN 978-0-7354-1194-4, 1566, pp.299-300. ⟨10.1063/1.4848404⟩. ⟨hal-00797345⟩

• Article dans une revue

Structure and electrical properties in the K1/2Bi1/2TiO3-K1/2Bi1/2ZrO3 solid solution (KBT-KBZ)

M. Bengagi, François Morini, M. El Maaoui, Pascal Marchet

The present work is devoted to the study of the Zr 4þ /Ti 4 substitution in the K1/2Bi1/2Ti(1-x)ZrxO3 solid solution (x ¼ 0.0 to x ¼ 1.0), based upon the K1/2Bi1/2TiO3 (KBT) ferroelectric compound. The tetragonal distortion of KBT is suppressed by this substitution and leads to the cubic compound...

Physica Status Solidi A (applications and materials science), 2012, 209, pp.2063-2072. ⟨10.1002/pssa.201127327⟩. ⟨hal-00720501⟩

• Article dans une revue

Low frequency dielectric loss of metal/insulator/organic semiconductor junctions in ambient conditions

Romuald Ledru, Stéphane Pleutin, Bruno Grouiez, Damien Zander, H. Bejbouji, Kamal Lmimouni, Dominique Vuillaume

The complex admittance of metal/oxide/pentacene thin film junctions is investigated under ambient conditions. At low frequencies, a contribution attributed to proton diffusion through the oxide is seen. This diffusion is shown to be anomalous and is believed to be also at the origin of the bias...

Organic Electronics, 2012, 13 (10), pp.1916-1924. ⟨10.1016/j.orgel.2012.04.035⟩. ⟨hal-00787369⟩

• Article dans une revue

Phonons in Slow Motion: Dispersion Relations in Ultra-Thin Si Membranes

John Cuffe, Emigdio Chavez, Andrey Shchepetov, Pierre-Olivier Chapuis, El Houssaine El Boudouti, Francesc Alzina, Timothy Kehoe, Jordi Gomis-Bresco, Damian Dudek, Yan Pennec, Bahram Djafari-Rouhani, Mika Prunnila, Jouni Ahopelto, Clivia. M. Sotomayor Torres

We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as \sim 8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than one order of magnitude compared to bulk values. The...

Nano Letters, 2012, 12 (7), pp.3569-3573. ⟨10.1021/nl301204u⟩. ⟨hal-00732480⟩

• Article dans une revue

In situ silicon-integrated tuner for automated on-wafer mmW noise parameters extraction using multi-impedance method for transistor characterization

Y. Tagro, N. Waldhoff, D. Gloria, S. Boret, Gilles Dambrine

IEEE Transactions on Semiconductor Manufacturing, 2012, 25, pp.170-177. ⟨10.1109/TSM.2011.2181673⟩. ⟨hal-00819467⟩

• Article dans une revue

Spectroscopic diagnostics and modelling of a N-2-Ar mixture discharge created by an RF helical coupling device: I. Kinetics of N-2(B (3)Pi(g)) and N-2(C (3)Pi(u)) states

Foissac C, Kristof J, Annusova A, Veis P, Supiot P

Plasma Sources Sci. Technol., 2012, 21, ⟨10.1088/0963-0252/21/5/055021⟩. ⟨hal-03090542⟩