Publicaciones

• COMM

Kinetics of N2(B3Πg) and N2(C3Πu) states in N2-Ar discharges sustained by a RF helical coupling device

Corinne Foissac, Jaroslav Krištof, Adriana Annusova, Pavel Veis, Philippe Supiot

A kinetic model is discussed for the two main emitting species (N2(B), N2(C)) of a N2-Ar plasma excited at 27 MHz by a helical cavity with operating pressure of 200 Pa. The present paper consistently illustrates, for miscellaneous Ar fractions and different positions, the great influence of the...

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, Jul 2012, Viana do Castelo, Portugal. paper P1.1.9, 1-2. ⟨hal-00802620⟩

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Time-domain semiconductor structure simulation based on 2D/3D coupled electromagnetism/transport modeling

Christophe Dalle

Advanced Electromagnetics Symposium, AES 2012, 2012, Paris, France. pp.116-120. ⟨hal-00802589⟩

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An upper bound of soft decode and forward relaying over Rayleigh fading channels

H. Ben Chikha, Iyad Dayoub, S. Chaoui, R. Attia

16th WSEAS International Conference on Communications, part of CSCC'12, 2012, Kos Island, Greece. pp.485-489. ⟨hal-00802558⟩

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Characterization on AlGaN/GaN/Si HEMTs devices passivated with SiN/SiO2

H. Mosbahi, M. Gassoumi, M.A. Zaidi, Vanessa Avramovic, Christophe Gaquière, B. Grimbert, H. Maaref

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801155⟩

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A 1kPixel CMOS camera chip for 25fps real-time terahertz imaging applications

H. Sherry, J. Grzyb, Y. Zhao, R. Al Hadi, A. Cathelin, A. Kaiser, U. Pfeiffer

IEEE International Solid-State Circuits Conference, ISSCC 2012, 2012, San Francisco, CA, United States. pp.252-254, ⟨10.1109/ISSCC.2012.6176997⟩. ⟨hal-00801095⟩

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Investigation on the optical gain and threshold current density of Ga1-xInxAs1-y-zNySbz/GaAs strained quantum wells laser

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to exploit the properties of the GaInAsNSb/GaAs alloy compressive highly strain structure. Ga 1-x In x As 1-y-z N y Sb z has been found to be a potentially superior material to GaInAsN for optical fiber communications long wavelength laser (VCSELs) applications. Indeed, this...

3rd International Conference on Multimedia Computing and Systems, ICMCS'12, 2012, Tangier, Morocco. pp.1083-1086, ⟨10.1109/ICMCS.2012.6320124⟩. ⟨hal-00801123⟩

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Band offsets : nano is not bulk

Y.M. Niquet, C. Delerue

15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.3-4. ⟨hal-00801124⟩

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Source-drain scaling of ion-implanted InAs/AlSb HEMTs

G. Moschetti, P. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.57-60, ⟨10.1109/ICIPRM.2012.6403318⟩. ⟨hal-00801079⟩

• COMM

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Jérémy Dufraisse, Charu Dua, Mourad Oualli, Eric Chartier, Marie-Antoinette Di Forte-Poisson, Christophe Gaquière, Sylvain Laurent Delage

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power...

34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩

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[Invited] New generation of flexible GHz graphene transistor

H. Happy, C. Sire, F. Ardiaca, Sylvie Lepilliet, J.W.T. Seo, M.C. Hersam, Gilles Dambrine, Vincent Derycke

19th International Display Workshops joint with Asia Display 2012, IDW/AD'12, 2012, Kyoto, Japan. pp.139-140. ⟨hal-00801045⟩