Publicaciones

• Communication dans un congrès

Frequency dielectric analysis of metal/insulator/organic semi-conductor junctions

R. Ledru, D. Zander, S. Pleutin, B. Grouiez, K. Lmimouni, D. Vuillaume

8th International Conference on Organic Electronics, ICOE 2012, 2012, Tarragona, Spain. ⟨hal-00797680⟩

• Communication dans un congrès

Integrated prism-free coupled surface plasmon resonance biochemical sensor

C. Lenaerts, J. Hastanin, B. Pinchemel, Sophie Maricot, Jean-Pierre Vilcot, S. Habraken, N. Maalouli, E. Wijaya, M. Bouazaoui, C. Desfours, K. Fleury

2nd Workshop on Frontiers in Biological Detection, PLASMOBIO 2012, 2012, Mons, Belgium. ⟨hal-00797733⟩

• Communication dans un congrès

Molecule/electrode interface energetics in nanocontact molecular junction : a ''transition voltage spectroscopy'' study

S. Lenfant, G. Ricoeur, David Guérin, D. Vuillaume

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium D : Nanocontacts - Emerging Materials and Processing for Ohmicity and Rectification, 2012, San Francisco, CA, United States. ⟨hal-00797681⟩

• Communication dans un congrès

UWB channel modeling for objects evolving in impulsive environnements

Nourddine Azzaoui, Laurent Clavier

We consider channel modeling issues in the context where communicating objects are evolving in impulsive environments. It was shown recently that α-stable random processes are attractive solution for representing the ultra wide band communication channel in relatively large spatial areas. In this...

Wireless Communications and Networking Conference Workshops (WCNCW), 2012 IEEE, 2012, France. pp.191 - 195, ⟨10.1109/GLOCOMW.2010.5700305⟩. ⟨hal-00732995⟩

• Article dans une revue

Analytical modeling of acoustic emission from buried or surface-breaking crack under stress

W. Ben Khalifa, K. Jezzine, G. Hello, Sébastien Grondel

Journal of Physics: Conference Series, 2012, 353, pp.012016-1-12. ⟨10.1088/1742-6596/353/1/012016⟩. ⟨hal-00790432⟩

• Article dans une revue

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-...

• Article dans une revue

Hysteretic magnetoresistance in stress controled magnetic memory device

Yannick Dusch, V. Rudenko, Nicolas Tiercelin, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2012, 2, pp.44-50. ⟨hal-00787359⟩

• Article dans une revue

Locating an individual quantum hall island inside a quantum ring

F. Martins, S. Faniel, M.G. Pala, Hermann Sellier, Serge Huant, L. Desplanque, X. Wallart, V. Bayot, B. Hackens

AIP Conference Proceedings, 2012, ISBN 978-0-7354-1194-4, 1566, pp.299-300. ⟨10.1063/1.4848404⟩. ⟨hal-00797345⟩

• Article dans une revue

Structure and electrical properties in the K1/2Bi1/2TiO3-K1/2Bi1/2ZrO3 solid solution (KBT-KBZ)

M. Bengagi, François Morini, M. El Maaoui, Pascal Marchet

The present work is devoted to the study of the Zr 4þ /Ti 4 substitution in the K1/2Bi1/2Ti(1-x)ZrxO3 solid solution (x ¼ 0.0 to x ¼ 1.0), based upon the K1/2Bi1/2TiO3 (KBT) ferroelectric compound. The tetragonal distortion of KBT is suppressed by this substitution and leads to the cubic compound...

Physica Status Solidi A (applications and materials science), 2012, 209, pp.2063-2072. ⟨10.1002/pssa.201127327⟩. ⟨hal-00720501⟩

• Article dans une revue

Low frequency dielectric loss of metal/insulator/organic semiconductor junctions in ambient conditions

Romuald Ledru, Stéphane Pleutin, Bruno Grouiez, Damien Zander, H. Bejbouji, Kamal Lmimouni, Dominique Vuillaume

The complex admittance of metal/oxide/pentacene thin film junctions is investigated under ambient conditions. At low frequencies, a contribution attributed to proton diffusion through the oxide is seen. This diffusion is shown to be anomalous and is believed to be also at the origin of the bias...

Organic Electronics, 2012, 13 (10), pp.1916-1924. ⟨10.1016/j.orgel.2012.04.035⟩. ⟨hal-00787369⟩