Publicaciones

• PROCEEDINGS

Il Trattato di Fortificazione di Galileo Galilei (Galileio Galilei's Trattato di Fortificazione)

Raffaele Pisano, Danilo Capecchi

Proceedings of the 4th History of Engineering Conference, I, Cuzzolin, pp.77-90, 2012, 978-88-87479-48-5. ⟨hal-04514409⟩

• ART

Ultrasonic tomographic reconstruction of liquid flows using phase-conjugate waves

Y.V. Pyl'Nov, S.S. Koshelyuk, Philippe Pernod, Y.I. Kutlubaeva

Physics of Wave Phenomena, 2012, 20, pp.231-234. ⟨10.3103/S1541308X12030119⟩. ⟨hal-00787371⟩

• COMM

Phononic and photonic properties of a stubbed strip waveguide

Yan Pennec, Bahram Djafari-Rouhani, Mourad Oudich, Said El-Jallal, Josemaria Escala, Alejandro Martinez, Vincent Laude

Many studies have been devoted to the search of photonic and phononic band gaps, but relatively few works are dealing with the simultaneous control of phonons and photons. Phoxonic structures hold promises for the simultaneous confinement and tailoring of sound and light waves with potential...

ASME 2012 International Mechanical Engineering Congress and Exposition, IMECE 2012, Symposium on Phononic Crystals and Acoustic Metamaterials, 2012, Houston, TX, United States. ⟨hal-00986895⟩

• ART

Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires

Y.M. Niquet, C. Delerue, D. Rideau, Brice Videau

Phonon-limited mobilities of electrons and holes in Si nanowires (NWs) with 〈001〉, 〈110〉, and 〈111〉 orientations are calculated in a fully atomistic framework for diameters up to 10 nm. Electron-phonon scattering rates are computed with an sp3d5s* tight-binding model for electrons and a valence-...

• ART

Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTS

M. Gassoumi, B. Grimbert, Christophe Gaquière, H. Maaref

Semiconductors, 2012, 46, pp.382-385. ⟨10.1134/S1063782612030104⟩. ⟨hal-00788194⟩

• ART

[Review] Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

F. Berthet, Y. Guhel, H. Gualous, B. Boudart, J.L. Trolet, M. Piccione, V. Sbrugnera, B. Grimbert, Christophe Gaquière

Solid-State Electronics, 2012, 72, pp.15-21. ⟨10.1016/j.sse.2011.12.002⟩. ⟨hal-00788193⟩

• ART

Hysteretic magnetoresistance in stress controled magnetic memory device

Yannick Dusch, V. Rudenko, Nicolas Tiercelin, S. Giordano, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2012, 2, pp.44-50. ⟨hal-00787359⟩

• ART

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, D. Gloria, Christophe Gaquière

Electronics Letters, 2012, 48, pp.1627-1629. ⟨10.1049/el.2012.3443⟩. ⟨hal-00788176⟩

• ART

In-line dynamic acoustic behavior of a viscoelastic complex media : dough application

Georges Nassar, Bertrand Nongaillard, J. Cheio

Open Acoustics Journal, 2012, 5, pp.39-45. ⟨10.2174/1874837601205010039⟩. ⟨hal-00788343⟩

• ART

Analytical modeling of acoustic emission from buried or surface-breaking crack under stress

W. Ben Khalifa, K. Jezzine, G. Hello, Sébastien Grondel

Journal of Physics: Conference Series, 2012, 353, pp.012016-1-12. ⟨10.1088/1742-6596/353/1/012016⟩. ⟨hal-00790432⟩