Publicaciones

• ART

Acoustic technique to monitor the kinetics of porous development phenomena in viscoelastic media

Georges Nassar, A. Skaf, N. Saad

Journal of Sound and Vibration, 2012, 331, pp.540-555. ⟨10.1016/j.jsv.2011.07.019⟩. ⟨hal-00788336⟩

• ART

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

• ART

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

• ART

Receiver-aided predistortion of power amplifier non-linearities in cellular networks

J. Zeleny, C. Dehos, P. Rosson, A. Kaiser

IET Science Measurement and Technology, 2012, 6, pp.168-175. ⟨10.1049/iet-smt.2011.0016⟩. ⟨hal-00787384⟩

• ART

High-performance modulation-doped heterostructure-thermopiles for uncooled infrared image-sensor application

M. Abe, N. Kogushi, K.S. Ang, R. Hofstetter, K. Manoj, L.N. Retnam, H. Wang, G.I. Ng, C. Jin, D. Pavlidis

IEICE Transactions on Electronics, 2012, E95-C, pp.1354-1362. ⟨10.1587/transele.E95.C.1354⟩. ⟨hal-00790416⟩

• ART

Planar InAs/AlSb HEMTs with ion-implanted isolation

G. Moschetti, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

IEEE Electron Device Letters, 2012, 33, pp.510-512. ⟨10.1109/LED.2012.2185480⟩. ⟨hal-00787019⟩

• ART

Sub-1-dB minimum-noise-figure performance of GaN-on-Si transistors up to 40 GHz

F Medjdoub, Yoann Tagro, Malek Zegaoui, B. Grimbert, Francois Danneville, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

We report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a 100-mm Si substrate with low-noise properties up to 40 GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency...

IEEE Electron Device Letters, 2012, 33 (9), pp.1258-1260. ⟨10.1109/LED.2012.2205215⟩. ⟨hal-00786956⟩

• COMM

A neuro-inspired memristive organic-nanoparticle synapse-transistor (synapstor)

F. Alibart, S. Pleutin, David Guérin, D. Vuillaume, O. Bichler, W. Zhao, C. Gamrat

MemCo Workshop, Memristors for computing, 2012, Fréjus, France. ⟨hal-00797694⟩

• COMM

Development and simulation of a structure based on CuIn1-xGaxSe2 semiconductors alloys for a new generation of photovoltaic cells

Abdelkader Aissat, M. Fathi, Jean-Pierre Vilcot

The aim of our study is the development and simulation of thin films structure based on CuIn1-xGaxSe2 semiconductors alloys to improve the conversion efficiency of solar cells. We studied and simulated the variation effect of the Gallium concentration on some physical and electrical properties (...

International Conference on Clean Energy Solutions for Sustainable Environment, TerraGreen12, 2012, Beirut, Lebanon. pp.197-204, ⟨10.1016/j.egypro.2012.05.031⟩. ⟨hal-00801115⟩

• COMM

Narrow linewidth tunable THz signal radiated by 1.55 µm photomixing

Alain Rolland, Guillaume Ducournau, Goulc'Hen Loas, Alexandre Beck, Fabio Pavanello, Emilien Peytavit, Tahsin Akalin, Mohammed Zaknoune, Jean-Francois Lampin, Marc Brunel, François Bondu, Marc Vallet, Mehdi Alouini

THz has become a wide field of investigation opening new opportunities in a growing number of domains of physics, chemistry, and biology. Among the different techniques existing today to generate THz fields, heterodyning two optical frequencies is a useful approach when tunability is required....

SPIE Optics + Photonics, Terahertz Emitters, Receivers, and Applications III, 2012, San Diego, CA, United States. pp.84960C-1-7, ⟨10.1117/12.929738⟩. ⟨hal-00803097⟩