Publicaciones

Affichage de 8111 à 8120 sur 16055


  • ART

Polymer-based zero-level packaging technology for high frequency RF applications by wafer bonding/debonding technique using an anti-adhesion layer

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

International Journal of Precision Engineering and Manufacturing, 2012, 13, pp.1861-1867. ⟨10.1007/s12541-012-0244-7⟩. ⟨hal-00786960⟩

  • ART

Supercritical dynamics of magnetoelastic wave triad in a solid

Vladimir Preobrazhensky, O. Yevstafyev, Philippe Pernod, Olivier Bou Matar, V. Berzhansky

Physics of Wave Phenomena, 2012, 20, pp.256-263. ⟨10.3103/S1541308X12040036⟩. ⟨hal-00787360⟩

  • ART

Receiver-aided predistortion of power amplifier non-linearities in cellular networks

J. Zeleny, C. Dehos, P. Rosson, A. Kaiser

IET Science Measurement and Technology, 2012, 6, pp.168-175. ⟨10.1049/iet-smt.2011.0016⟩. ⟨hal-00787384⟩

  • ART

High power density performances of SiGe HBT from BiCMOS technology at W-band

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier, Christophe Gaquière

IEEE Electron Device Letters, 2012, 33, pp.182-184. ⟨10.1109/LED.2011.2177631⟩. ⟨hal-00788168⟩

  • ART

Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth : experimental and theoretical study

V. Mortet, L. Zhang, M. Eckert, J. d'Haen, A. Soltani, M. Moreau, David Troadec, E. Neyts, Jean-Claude de Jaeger, J. Verbeeck, A. Bogaerts, G. van Tendeloo, K. Haenen, P. Wagner

Physica Status Solidi A (applications and materials science), 2012, 209, pp.1675-1682. ⟨10.1002/pssa.201200581⟩. ⟨hal-00788174⟩

  • ART

A parallel concatenated convolutional-based distributed coded cooperation scheme for relay channels

H. Ben Chikha, S. Chaoui, Iyad Dayoub, Jean-Michel Rouvaen, R. Attia

Wireless Personal Communications, 2012, 67, pp.951-969. ⟨10.1007/s11277-011-0433-1⟩. ⟨hal-00788179⟩

  • ART

UWB communication system based on bipolar PPM with orthogonal waveforms

A. Elabed, F. Elbahhar, Yassin El Hillali, Atika Rivenq, Raja Elassali

Wireless Engineering and Technology, 2012, 3, pp.181-188. ⟨10.4236/wet.2012.33026⟩. ⟨hal-00788184⟩

  • ART

The effect of gate length variation on InAlGaN/GaN HFET device characteristics

N. Ketteniss, H. Behmenburg, F. Lecourt, N. Defrance, Virginie Hoel, Jean-Claude de Jaeger, M. Heuken, H. Kalisch, A. Vescan

Semiconductor Science and Technology, 2012, 27, pp.035009-1-4. ⟨10.1088/0268-1242/27/3/035009⟩. ⟨hal-00788167⟩