Publicaciones

• Communication dans un congrès

Initiation à la microfluidique par la simulation, la réalisation et la caractérisation de microsystèmes

Simon Laurette, Renaud Dufour, Thomas Dargent, Maxime Harnois, Nour Eddine Bourzgui, Vincent Thomy

12es Journées Pédagogiques CNFM, 2012, Saint Malo, France. pp.1-6. ⟨hal-00806632⟩

• Article dans une revue

Dielectric constant determination of liquid using rectangular waveguide structure combined with EM simulation

M.D. Belrhiti, S. Bri, A. Nakheli, M. Haddad, A. Mamouni

Journal of Materials and Environmental Science , 2012, 3, pp.575-584. ⟨hal-00806589⟩

• Communication dans un congrès

Modélisation physique numérique 2D/3D de structures semiconductrices dans le domaine temporel basée sur le couplage électromagnétisme/transport

Christophe Dalle

7ème Conférence Européenne sur les Méthodes Numériques en Electromagnétisme, NUMELEC 2012, 2012, Marseille, France. pp.128-129. ⟨hal-00806614⟩

• Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

• Article dans une revue

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

Michel Rousseau, A. Soltani, Jean-Claude de Jaeger

This letter describes the thermal behavior of AlGaN/GaN high electron mobility transistors on different substrates thanks to a fully consistent physical-thermal model. Self-heating explains the drastic reduction in the current flowing from drain to source. It is shown that, in order to keep the...

Applied Physics Letters, 2012, 101 (12), pp.122101. ⟨10.1063/1.4753815⟩. ⟨hal-00787873⟩

• Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩

• Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

• Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we...

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

• Article dans une revue

Theoretical and experimental evidence of level repulsion states and evanescent modes in sonic crystal stubbed waveguides

V. Romero-Garcia, Jerome O. Vasseur, Lluis Miquel Garcia-Raffi, Anne-Christine Hladky

The complex band structures calculated using the Extended Plane Wave Expansion (EPWE) reveal the presence of evanescent modes in periodic systems, never predicted by the classical ω(~k) methods, providing novel interpretations of several phenomena as well as a complete picture of the system. In...

New Journal of Physics, 2012, 14, pp.023049-1-21. ⟨10.1088/1367-2630/14/2/023049⟩. ⟨hal-00786887⟩

• Article dans une revue

Ricean K-factor and SNR estimation for M-PSK modulated signals using the fourth-order cross-moments matrix

I. Bousnina, M.B. Ben Salah, A. Samet, Iyad Dayoub

IEEE Communications Letters, 2012, 16, pp.1236-1239. ⟨10.1109/LCOMM.2012.061912.120708⟩. ⟨hal-00788185⟩