Publicaciones

• Communication dans un congrès

Wafer-level BCB cap packaging of integrated MEMS switches with MMIC

S. Seok, J.G. Kim, M. Fryziel, N. Rolland, P.A. Rolland, H. Maher, W. Simon, R. Baggen

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6258270⟩. ⟨hal-00801069⟩

• Communication dans un congrès

Millimeter-wave ultra-wide-band antenna array integrated on silicon with BCB membranes

L. Dussopt, H. Salti, J. Kim, S. Seok, N. Rolland

Joint 2012 IEEE International Symposium on Antennas and Propagation and USNC-URSI National Radio Science Meeting, APS-URSI 2012, 2012, Chicago, IL, United States. paper 258.3, 1-2, ⟨10.1109/APS.2012.6348057⟩. ⟨hal-00801063⟩

• Communication dans un congrès

Antenne miniature circulaire pour application en téléphone portable 3G

M. Ben Ahmed, M. Bouhorma, F. Elouaai, A. Mamouni, A.A. Boudhir

12èmes Journées de Caractérisation Microondes et Matériaux, JCMM 2012, 2012, Chambéry, France. session S8, papier ID38, 1-2. ⟨hal-00806611⟩

• Communication dans un congrès

Transport properties of strained silicon nanowires

Y.M. Niquet, C. Delerue, V.H. Nguyen, Christophe Krzeminski, F. Triozon

42nd European Solid-State Device Research Conference, ESSDERC 2012, 2012, Bordeaux, France. pp.session C3L-G, 290-293, ⟨10.1109/ESSDERC.2012.6343390⟩. ⟨hal-00801132⟩

• Communication dans un congrès

Aspects of computing with locally connected networks

V. Beiu, M. Calame, G. Cuniberti, C. Gamrat, Z. Konkoli, D. Vuillaume, G. Wendin, S. Yitzchaik

10th International Conference of Numerical Analysis and Applied Mathematics, ICNAAM 2012, 2012, Kos, Greece. pp.1875-1879, ⟨10.1063/1.4756547⟩. ⟨hal-00801092⟩

• Communication dans un congrès

AlN/GaN-on-silicon devices for millimeter wave high power/low noise applications

F Medjdoub, Malek Zegaoui, Y. Tagro, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

6th Space Agency - MOD Workshop on Wideband Gap Semiconductors and Components, 2012, Noordwijk, Netherlands. pp.CD-ROM, 1-8. ⟨hal-00801061⟩

• Communication dans un congrès

MEMS-4-MMIC : the next step in combined GaAs MEMS-MMIC technology

L. Baggen, W. Simon, R. Malmqvist, T. Vaha-Heikkila, H. Maher, S. Seok

15th International Symposium on Antenna Technology and Applied Electromagnetics, ANTEM 2012, 2012, Toulouse, France. pp.1-5, ⟨10.1109/ANTEM.2012.6262342⟩. ⟨hal-00801060⟩

• Communication dans un congrès

Magnetostatic micro-actuator based on ultrasoft elastomeric membrane and copper-permalloy electrodeposited structures

Jérémy Streque, Abdelkrim Talbi, Clément Bonnerot, Philippe Pernod, Vladimir Preobrazhensky

This paper presents different designs of magnetostatic micro-actuators, based on both conventional and integrated micro-coils. A 3-dimensional magnetic circuit made of Permalloy is proposed in order to improve their efficiency. The mobile parts of the micro-actuators are made of ultrasoft...

25th IEEE Conference on Micro Electro Mechanical Systems, MEMS 2012, 2012, Paris, France. pp.1157-1160, ⟨10.1109/MEMSYS.2012.6170368⟩. ⟨hal-00801090⟩

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 1/1]

Raffaele Pisano

2012. ⟨hal-04511057⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:...

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩