Publicaciones

Affichage de 9321 à 9330 sur 16055


  • COMM

Relaxation of hot carriers in Si nanocrystals

Christophe Delerue, Guy Allan

E-MRS 2010 Spring Meeting Symposium J : Silicon-based nanophotonics, Jun 2010, Strasbourg, France. ⟨hal-03317057⟩

  • COMM

Deep structural analysis of novel BGaN material layers grown by MOVPE

S. Gautier, G. Patriarche, T. Moudakir, M. Abid, G. Orsal, K. Pantzas, David Troadec, A. Soltani, L. Largeau, O. Mauguin, A. Ougazzaden

BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at...

ICMOVPE XV, Jun 2010, Lake Tahoe, United States. ⟨10.1016/j.jcrysgro.2010.08.042⟩. ⟨hal-00554350⟩

  • COMM

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area Growth

W. H. Goh, G. Patriarche, P. L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z. H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, David Troadec, A. Soltani, A. Ougazzaden

Nanodots, nanowires, and semi-polar quantum well structures of GaN-based material have been grown by nano-selective area growth (NSAG). The growth evolution of the nanostructure has been studied. Cross-sectional transmission electron microscopy (TEM) shows that the nanostructures are free of...

ICMOVPE XV, Jun 2010, Lake Tahoe, United States. ⟨10.1016/j.jcrysgro.2010.08.053⟩. ⟨hal-00554340⟩

  • COMM

MEMS advances and GaN based approaches

Marc Faucher, Virginie Brandli, Bertrand Grimbert, Achraf Ben Amar, Matthieu Werquin, Christophe Gaquière, Didier Theron, Lionel Buchaillot

34th Workshop on Compound Semiconductor Devices and Integrated Circuits in Europe, WOCSDICE 2010, May 2010, Darmstadt, Germany. ⟨hal-00808201⟩