Publicaciones

• Communication dans un congrès

Influence de l'indium et l'azote sur la structure à puits quantique à base de Ga1-xInxAs1-xNy/GaAs

Abdelkader Aissat, Said Nacer, Mohamed Seghilani, Jean-Pierre Vilcot

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Tanger, Maroc. CDROM, session A4, papier 37, 1-4. ⟨hal-00591372⟩

• Article dans une revue

Modelling of optical Kerr effects on the static and dynamic behaviors of quantum cascade laser

A. Hamadou, Jean-Luc Thobel

Optics Communications, 2011, 284, pp.2972-2979. ⟨10.1016/j.optcom.2011.01.078⟩. ⟨hal-00591326⟩

• Communication dans un congrès

Etude des effets cumulatifs des expositions aux radiofréquences GSM et WIFI sur le cycle biologique de la drosophile

F. Elouaai, M. Lebbadi, M. Ben Ahmed, M. Bouhorma, A. Mamouni

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Maroc. CDROM, session P2, papier 221, 1-4. ⟨hal-00591382⟩

• Communication dans un congrès

Self aligned 200nm In0.53Ga0.47As

A. Olivier, J.J. Mo, Nicolas Wichmann, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

TELECOM'2011 & 7èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2011, Morocco. CDROM, session A1, papier 164, 1-3. ⟨hal-00591363⟩

• Article dans une revue

Geometry pattern for the wire organic electrochemical textile transistor

X.Y. Tao, V. Koncar, C. Dufour

Journal of The Electrochemical Society, 2011, 158, pp.H572-H577. ⟨10.1149/1.3562962⟩. ⟨hal-00591319⟩

• Autre publication scientifique

Transport quantique dans des nanostructures semiconductrices

Renaud Leturcq

2011. ⟨hal-00591733⟩

• Article dans une revue

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200...

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2011, 58, pp.2516-2520. ⟨10.1109/TUFFC.2011.2114⟩. ⟨hal-00783414⟩

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of...

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Article dans une revue

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential...

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at...

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩