Publicaciones

• ART

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All...

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

• ART

A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩

• COMM

Carbon nanotube programmable devices : toward circuits with learning capabilities

Guillaume Agnus, David Brunel, Karim Gacem, Weisheng Zhao, Arianna Filoramo, Stéphane Lenfant, Dominique Vuillaume, Christian Gamrat, Jean-Philippe Bourgoin, Vincent Derycke

5th International Meeting on Molecular Electronics, ElecMol'10, 2010, Grenoble, France. ⟨hal-00574085⟩

• ART

Statistical channel model based on alpha-stable random processes and application to the 60 GHz ultra wide band channel

N. Azzaoui, Laurent Clavier

IEEE Transactions on Communications, 2010, 58, pp.1457-1467. ⟨10.1109/TCOMM.2010.05.090069⟩. ⟨hal-00548612⟩

• ART

AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage

IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩

• COMM

Continuous wave terahertz photomixer from low temperature grown GaAs with high carrier mobility

H. Tanoto, Q.Y. Wu, J.H. Teng, M. Sun, Z.N. Chen, T. Htoo, S.J. Chua, Jean-Francois Lampin, A. Gokarna, El Hadj Dogheche

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, 2010, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612417⟩. ⟨hal-00549948⟩

• ART

High frequency modelling of power transformer : application to railway substation in scale model

H. Ouaddi, S. Baranowski, N. Idir

Przeglad Elektrotechniczny , 2010, 86, pp.165-169. ⟨hal-00549475⟩

• ART

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,...

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

• ART

Polarization-independent imaging with an acousto-optic tandem system

Konstantin B. Yushkov, Samuel Dupont, Jean-Claude Kastelik, V.B. Voloshinov

Optics Letters, 2010, 35, pp.1416-1418. ⟨10.1364/OL.35.001416⟩. ⟨hal-00549023⟩

• COMM

Radiation pattern measurements of an integrated TEM horn antenna

Jean-Francois Lampin, Guillaume Ducournau, Alexandre Beck, Damien Ducatteau, Emilien Peytavit, Tahsin Akalin

A TEM horn antenna is integrated with a uni-travelling-carrier photodiode. Its radiation pattern is measured from 280 to 540 GHz thanks to a 1.55 μm photomixing set-up and a sub-harmonic mixer. The direction the main lobe shifts to a lower incidence when the frequency is increased.

35th International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2010, Sep 2010, Rome, Italy. pp.1-2, ⟨10.1109/ICIMW.2010.5612961⟩. ⟨hal-00549955⟩