Publicaciones

• Article dans une revue

Regrowth of oxide-embedded amorphous silicon studied with molecular dynamics

E. Lampin, Christophe Krzeminski

Journal of Applied Physics, 2011, 109, pp.123509-1-5. ⟨10.1063/1.3596815⟩. ⟨hal-00603127⟩

• Communication dans un congrès

Small signal and HF noise performance of 45nm CMOS technology in mmW range

L. Poulain, N. Waldhoff, D. Gloria, Francois Danneville, Gilles Dambrine

IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/RFIC.2011.5940646⟩. ⟨hal-00799962⟩

• Chapitre d'ouvrage

Confined and guided vapor-liquid-solid catalytic growth of silicon nanoribbons : from nanowires to structured silicon-on-insulator layers

Aurélie Lecestre, Emmanuel Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche, C. Maurice

Nazarov A., Colinge J.P., Balestra F., Raskin J.P., Gamiz F., Lysenko V.S. Semiconductor-on-insulator materials for nanoelectronics applications, Springer Berlin Heidelberg, pp.Part 1, 67-89, 2011, Collection : Chemistry and materials science, Series : Engineering materials, ⟨10.1007/978-3-642-15868-1_4⟩. ⟨hal-00591734⟩

• Communication dans un congrès

Antennes accordables en fréquence dans la bande des 60 GHz sur substrat élastomère ultrasouple

S. Hage-Ali, Nicolas Tiercelin, Philippe Coquet, Yannick Dusch, Ronan Sauleau, Vladimir Preobrazhensky, Philippe Pernod

17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, Brest, France. pp.3C4, 1-4. ⟨hal-00597151⟩

• Article dans une revue

A complete UMTS transmitter using BAW filters and duplexer : a 90-nm CMOS digital RF signal generator and a 0.25-μm BiCMOS power amplifier

A. Flament, A. Frappe, B. Stefanelli, A. Kaiser, A. Cathelin, S. Giraud, Matthieu Chatras, Stéphane Bila, Dominique Cros, J.B. David, L. Leyssenne, E. Kerherve

International Journal of RF and Microwave Computer-Aided Engineering, 2011, 21, pp.466-476. ⟨10.1002/mmce.20551⟩. ⟨hal-00639862⟩

• Article dans une revue

Simulation of chemical vapor infiltration and deposition based on 3D images : a local scale approach

W. Ros, G.L. Vignoles, C. Germain, P. Supiot, G. Kokkoris

A numerical solution for the simulation of chemical vapor infiltration (CVI) of ceramic matrix composites is presented. This computational model requires a 3D representation of the preform. Gas transport and chemical reaction are simulated by a Monte Carlo random walk technique. The developed...

Chemical Vapor Deposition, 2011, 17, pp.312-320. ⟨10.1002/cvde.201106895⟩. ⟨hal-00783489⟩

• Communication dans un congrès

Siloxane polymerization on micro-patterned substrates by RPECVD

Philippe Supiot, Céline Vivien, Karine Blary

18th International Colloquium on Plasma Processes, CIP 2011, 2011, Nantes, France. ⟨hal-00807645⟩

• Article dans une revue

Controlling the transmission of ultrahigh frequency bulk acoustic waves in silicon by 45° mirrors

S. Wang, J. Gao, Julien Carlier, Pierre Campistron, Assane Ndieguene, S. Guo, Olivier Bou Matar, Dorothée Debavelaere-Callens, Bertrand Nongaillard

In this paper, we present a feasible microsystem in which the direction of localized ultrahigh frequency (∼1 GHz) bulk acoustic wave can be controlled in a silicon wafer. Deep etching technology on the silicon wafer makes it possible to achieve high aspect ratio etching patterns which can be used...

Ultrasonics, 2011, 51, pp.532-538. ⟨10.1016/j.ultras.2011.01.003⟩. ⟨hal-00574498⟩

• Article dans une revue

AlN/GaN heterostructures grown by metal organic vapour phase epitaxy with in situ Si3N4 passivation

K. Cheng, S. Degroote, M. Leys, F Medjdoub, J. Derluyn, B. Sijmus, Marie Germain, G. Borghs

Journal of Crystal Growth, 2011, 315, pp.204-207. ⟨10.1016/j.jcrysgro.2010.09.025⟩. ⟨hal-00572672⟩

• Article dans une revue

The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT's on SiC substrates

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, B. Grimbert, Julien Fontaine, Christophe Gaquière, H. Maaref

Microelectronic Engineering, 2011, 88, pp.370-372. ⟨10.1016/j.mee.2010.09.027⟩. ⟨hal-00572669⟩