Publicaciones

• COMM

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

• ART

Picosecond carrier lifetime in low-temperature-grown GaAsSb

X. Wallart, Christophe Coinon, S.R. Plissard, S. Godey, Olivier Offranc, Ydir Androussi, Vincent Magnin, Jean-Francois Lampin

We study the influence of growth parameters on the properties of low-temperature-grown GaAsSb layers with 15–20% Sb. We demonstrate that a proper choice of growth conditions allows achieving monocrystalline as-grown layers exhibiting carrier lifetime around 1 ps and a resistivity higher than 1 kΩ·...

Japanese Journal of Applied Physics, part 2 : Letters, 2010, 3, pp.111202-1-3. ⟨10.1143/APEX.3.111202⟩. ⟨hal-00548732⟩

• COMM

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩

• COMM

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and...

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

• COMM

Pushing conventional SiGe HBT technology towards 'dotfive' terahertz

A. Chantre, P. Chevalier, T. Lacave, G. Avenier, M. Buczko, Y. Campidelli, L. Depoyan, L. Berthier, Christophe Gaquière

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.21-24. ⟨hal-00550010⟩

• COMM

Reliability assessment in different HTO test conditions of AlGaN/GaN HEMTs

N. Malbert, N. Labat, A. Curutchet, C. Sury, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, Y. Douvry, C. Dua, M. Oualli, M. Piazza, C. Bru-Chevallier, J.M. Bluet, W. Chikhaoui

IEEE International Reliability Physics Symposium, IRPS 2010, 2010, United States. pp.139-145, ⟨10.1109/IRPS.2010.5488839⟩. ⟨hal-00550009⟩

• COUV

Multimode transmitters with ΔΣ-based all-digital RF signal generation

A. Frappe, A. Flament, B. Stefanelli, A. Kaiser

A.H.M. van Roermund, M. Steyaert, H. Casier. Analog circuit design : smart data converters, filters on chip, multimode transmitters, Springer-Verlag, pp.295-314, 2010. ⟨hal-00575857⟩

• ART

Calcium wave propagation in chains of endothelial cells with nonlinear reaction dynamics: Green's function approach

P.A. Deymier, K. Runge, M.J. Deymier, J.B. Hoying, Jerome O. Vasseur

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2010, 82, pp.041913-1-13. ⟨10.1103/PhysRevE.82.041913⟩. ⟨hal-00549050⟩

• ART

Further studies on the lithium phosphorus oxynitride solid electrolyte

T. Pichonat, C. Lethien, Nicolas Tiercelin, S. Godey, E. Pichonat, P. Roussel, Marie Colmont, P.A. Rolland

First step in the way to the fabrication of an all-solid microbattery for autonomous wireless sensor node, amorphous thin solid films of lithium phosphorus oxynitride (LiPON) were prepared by radio-frequency sputtering of a mixture target of P₂O₅/Li<...

Materials Chemistry and Physics, 2010, 123, pp.231 - 235. ⟨10.1016/j.matchemphys.2010.04.001⟩. ⟨hal-00514193⟩

• ART

An efficient speech recognition system in adverse conditions using the nonparametric regression

A. Amrouche, M. Debyeche, Abdelmalik Taleb-Ahmed, Jean-Michel Rouvaen, M.C.E. Yagoub

Engineering Applications of Artificial Intelligence, 2010, 23, pp.85-94. ⟨10.1016/j.engappai.2009.09.006⟩. ⟨hal-00549462⟩