Publications

Affichage de 10001 à 10010 sur 16058


  • COMM

Temperature dependent degradation modes in AlGaN/GaN HEMTs

Y. Douvry, Virginie Hoel, Jean-Claude de Jaeger, N. Defrance, N. Malbert, N. Labat, A. Curutchet, C. Sury, C. Dua, M. Oualli, M. Piazza, J. Bluet, W. Chikhaoui, C. Bru-Chevallier

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, Paris, France. pp.114-117. ⟨hal-00550022⟩

  • COMM

Digital compensation of the power amplifier nonlinearities at relay station receivers in 802.16j very high data rate systems

J. Zeleny, P. Rosson, C. Dehos, A. Kaiser

IEEE Radio and Wireless Symposium, RWS 2010, 2010, United States. pp.244-247, ⟨10.1109/RWS.2010.5434157⟩. ⟨hal-00549975⟩

  • COMM

Fabrication and characterization of 200-nm self-aligned In0.53Ga0.47As MOSFET

Aurélien Olivier, Nicolas Wichmann, Jiongjong Mo, Albert M.D. Noudeviwa, Yannick Roelens, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, François Martin, O. Desplats, Jérôme Saint-Martin, Minghua Shi, Y. Wang, M-P Chauvat, P. Ruterana, Hassan Maher

In this paper, a 200 nm n-channel inversion-type self-aligned In 0.53 Ga 0.47 As MOSFET with a Al 2 O 3 gate oxide deposited by Atomic Layer Deposition (ALD) is demonstrated. Two ion implantation processes using silicon nitride side-wall are performed for the fabrication of the n-type source and…

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, May 2010, Takamatsu, Japan. pp.41-43, ⟨10.1109/ICIPRM.2010.5515926⟩. ⟨hal-00549921⟩

  • COMM

DC and RF cryogenic behaviour of InAs/AlSb HEMTs

G. Moschetti, P.A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos, J. Grahn

22nd IEEE Conference on Indium Phosphide and Related Materials, IPRM'10, 2010, Japan. pp.321-324, ⟨10.1109/ICIPRM.2010.5516313⟩. ⟨hal-00549956⟩

  • ART

Optimization of SiNX:H films deposited by PECVD for reliability of electronic, microsystems and optical applications

E. Herth, Bernard Legrand, L. Buchaillot, N. Rolland, T. Lasri

Microelectronics Reliability, 2010, 50, pp.1103-1106. ⟨10.1016/j.microrel.2010.04.011⟩. ⟨hal-00549491⟩

  • ART

Development of a new generation of active AFM tools for applications in liquids

A.S. Rollier, D.F.L. Jenkins, El Hadj Dogheche, Bernard Legrand, M. Faucher, L. Buchaillot

Journal of Micromechanics and Microengineering, 2010, 20, pp.085010-1-11. ⟨10.1088/0960-1317/20/8/085010⟩. ⟨hal-00548990⟩

  • COMM

Resonant HEMT transducers and integrated MEMS resonators based on AlGaN/GaN/Si heterostructures

Marc Faucher, Bertrand Grimbert, Virginie Brandli, Yvon Cordier, Matthieu Werquin, Lionel Buchaillot, Christophe Gaquière, Didier Theron

Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2010, 2010, Newport Beach, CA, United States. ⟨hal-00808202⟩

  • COMM

Atomic force probe using silicon ring resonator conception

B. Walter, E. Mairiaux, M. Faucher, Z. Xiong, L. Buchaillot, Bernard Legrand

5èmes Journées Nationales du GDR Micro et Nano Systèmes, 2010, Lyon, France. ⟨hal-00808199⟩