Publications

Affichage de 9971 à 9980 sur 16058


  • OUV

Les chambres réverbérantes en électromagnétisme

B. Demoulin, P. Besnier

Hermes Science Publication, 422 p., 2010, ISBN 978-2-7462-2592-3. ⟨hal-00800613⟩

  • COUV

MEMS acoustiques

Michel Bruneau, Anne-Christine Hladky

Livre blanc de l'acoustique en France en 2010, Société Française d'Acoustique, pp.80, 2010, ISBN 978-2-919340-00-2. ⟨hal-00800615⟩

  • ART

Low-temperature scanning tunneling microscopy study of self-assembled InAs quantum dots grown by droplet epitaxy

Corentin Durand, A. Peilloux, K. Suzuki, K. Kanisawa, B. Grandidier, K. Muraki

Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy. We compare two different growth processes, the well-known Stranski-Krastanow mode and the more recently studied droplet epitaxy mode. We show…

Physics Procedia, 2010, Proceedings of the 14th International conference on Narrow Gap Semiconductors and Systems, 3 (2), pp.1299-1304. ⟨10.1016/j.phpro.2010.01.180⟩. ⟨hal-00568565⟩

  • ART

Synthesis and electrical properties of fullerene-based molecular junctions on silicon substrate

David Guérin, S. Lenfant, S. Godey, D. Vuillaume

Journal of Materials Chemistry, 2010, 20, pp.2680-2690. ⟨10.1039/b924255d⟩. ⟨hal-00548971⟩

  • COMM

GaN-on-Si HEMTs above 10 W/mm at 2 GHz together with high thermal stability at 325°C

F Medjdoub, D. Marcon, J. Das, J. Derluyn, K. Cheng, S. Degroote, N. Vellas, Christophe Gaquière, Marie Germain, S. Decoutere

5th European Microwave Integrated Circuits Conference, EuMIC 2010, 2010, France. pp.37-40. ⟨hal-00549996⟩

  • COMM

Spike timing dependent plasticity (STDP) learning rule in a nanoparticle-organic-memory field effect transistor (NOMFET)

F. Alibart, S. Pleutin, David Guérin, D. Vuillaume, O. Bichler, D. Querioz, C. Gamrat

5th International Meeting on Molecular Electronics, ElecMol'10, 2010, Grenoble, France. ⟨hal-00574105⟩

  • ART

Anisotropic transport properties in InAs/AlSb heterostructures

G. Moschetti, H. Zhao, P.A. Nilsson, S. Wang, A. Kalabukhov, Gilles Dambrine, S. Bollaert, L. Desplanque, X. Wallart, J. Grahn

Applied Physics Letters, 2010, 97, pp.243510-1-3. ⟨10.1063/1.3527971⟩. ⟨hal-00548565⟩