Publications

• ART

Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

Nicolas Wichmann, B.G. Vasallo, S. Bollaert, Yannick Roelens, X. Wallart, A. Cappy, T. Gonzalez, D. Pardo, J. Mateos

Applied Physics Letters, 2009, 94, pp.103504-1-3. ⟨10.1063/1.3095482⟩. ⟨hal-00469682⟩

• ART

Issues associated to rare earth silicide integration in ultra thin FD SOI Schottky barrier nMOSFETs

G. Larrieu, Dmitri Yarekha, Emmanuel Dubois, D. Deresmes, N. Breil, N. Reckinger, Xing Tang, A. Halimaoui

The paper focuses on specific issues associated to rare earth silicide integration on UTB-SOI substrate with a particular attention to erbium and ytterbium silicides. Due to the limited Si source, defects generation on SOI is prevented compared to bulk substrate. Reaction of RE with dielectric…

ECS Transactions, 2009, 19 (4), pp.201-207. ⟨10.1149/1.3117410⟩. ⟨hal-00471998⟩

• ART

InSb heterostructure nanowires : MOVPE growth under extreme lattice mismatch

P. Caroff, M.E. Messing, B.M. Borg, K.A. Dick, K. Deppert, L.E. Wernersson

Nanotechnology, 2009, 20, pp.495606-1-7. ⟨10.1088/0957-4484/20/49/495606⟩. ⟨hal-00471954⟩

• ART

Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux

F.J. Ferrer, E. Moreau, D. Vignaud, S. Godey, X. Wallart

Semiconductor Science and Technology, 2009, 24, pp.125014-1-4. ⟨10.1088/0268-1242/24/12/125014⟩. ⟨hal-00471909⟩

• ART

High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack

T.C. Lim, O. Rozeau, C. Buj, M. Paccaud, Sylvie Lepilliet, Gilles Dambrine, Francois Danneville

Solid-State Electronics, 2009, 53, pp.433-437. ⟨10.1016/j.sse.2008.09.022⟩. ⟨hal-00471807⟩

• ART

Monitoring SAW-actuated microdroplets in view of biological applications

A. Renaudin, J.P. Sozanski, B. Verbeke, V. Zhang, P. Tabourier, C. Druon

Sensors and Actuators B: Chemical, 2009, 138, pp.374-382. ⟨10.1016/j.snb.2009.02.031⟩. ⟨hal-00471820⟩

• ART

Low sensitivity to temperature compressive-strained structure quantum well laser Ga1-xInxAs1-yNy/GaAs

Abdelkader Aissat, Said Nacer, Messaoud Bensebti, Jean-Pierre Vilcot

The objective is to exploit the properties of the GaInNAs/GaAs alloy compressive strain structure to design a laser diode likely to meet the needs of optical communications. Modelling concerns mainly the study of the potentialities of thermal stability and dynamic response offered by these new…

Microelectronics Journal, 2009, 40, pp.10-14. ⟨10.1016/j.mejo.2008.09.005⟩. ⟨hal-00473042⟩

• ART

The collagen assisted self-assembly of silicon nanowires

B. Salhi, Francois Vaurette, B. Grandidier, D. Stievenard, O. Melnyk, Yannick Coffinier, Rabah Boukherroub

Nanotechnology, 2009, 20, pp.235601-1-6. ⟨10.1088/0957-4484/20/23/235601⟩. ⟨hal-00473380⟩

• ART

Doping of poly(3-hexylthiophene) nanofibers : microscopic morphology and electrical properties

S. Desbief, G. Derue, P. Leclère, S. Lenfant, D. Vuillaume, R. Lazzaroni

European Physical Journal: Applied Physics, 2009, 46, pp.12504-1-5. ⟨10.1051/epjap/2009017⟩. ⟨hal-00472767⟩

• ART

Maximum size of drops levitated by an air cushion

Jacco H Snoeijer, Philippe Brunet, Jens Eggers

Liquid drops can be kept from touching a plane solid surface by a gas stream entering from underneath, as it is observed for water drops on a heated plate, kept aloft by a stream of water vapor. We investigate the limit of small flow rates, for which the size of the gap between the drop and the…

Physical Review E : Statistical, Nonlinear, and Soft Matter Physics [2001-2015], 2009, 79 (3), pp.036307. ⟨10.1103/PhysRevE.79.036307⟩. ⟨hal-00469675⟩