Publications

• ART

Determination of the electrostatic lever arm of carbon nanotube field effect transistors using Kelvin force microscopy

David Brunel, D. Deresmes, Thierry Melin

We use Kelvin force microscopy (KFM) to study the electrostatic properties of single-walled carbon nanotube field effect transistor devices (CNTFETs) with backgate geometry at room temperature. We show that KFM maps recorded as a function of the device backgate polarization enable a complete…

Applied Physics Letters, 2009, 94, pp.223508-1-3. ⟨10.1063/1.3148364⟩. ⟨hal-00473086⟩

• ART

Diagnostics and doppler tomography of liquid flows with ultrasonic phase conjugation

Nikolay Smagin, Y.V. Pyl'Nov, V.L. Preobrazhenskii, Philippe Pernod

Acoustical Physics, 2009, 55, pp.657-664. ⟨10.1134/S1063771009040228⟩. ⟨hal-00469643⟩

• ART

Approach to interference cancellation in DS-CDMA optical networks

A. Okassa-M'Foubat, Iyad Dayoub, Jean-Michel Rouvaen, W. Hamouda, A. Mazen

Journal of Optical Communications and Networking, 2009, 1, pp.204-212. ⟨10.1364/JOCN.1.000204⟩. ⟨hal-00471830⟩

• ART

Nanowire biocompatibility in the brain - Looking for a needle in a 3D stack

Cecilia Eriksson-Linsmeier, Christelle Prinz, Lina M. E. Pettersson, Philippe Caroff, Lars Samuelson, Jens Schouenborg, Lars Montelius, Nils Danielsen

We investigated the brain-tissue response to nanowire implantations in the rat striatum after 1, 6, and 12 weeks using immunohistochemistry. The nanowires could be visualized in the scar by confocal microscopy (through the scattered laser light). For the nanowire-implanted animals, there is a…

Nano Letters, 2009, 9 (12), pp.4184–4190. ⟨10.1021/nl902413x⟩. ⟨hal-00471929⟩

• ART

Reconfigurable complex digital delta-sigma modulator synthesis for digital wireless transmitters

C.N. Nzeza, A. Kaiser, A. Cathelin

Revue Roumaine des Sciences Techniques. Serie Électrotechnique et Énergétique, 2009, 4, pp.385-394. ⟨hal-00471992⟩

• ART

Contactless microwave technique based on a spread-loss model for dielectric materials characterization

Kamel Haddadi, M.M. Wang, O. Benzaim, D. Glay, T. Lasri

IEEE Microwave and Wireless Components Letters, 2009, 19, pp.33-35. ⟨10.1109/LMWC.2008.2008573⟩. ⟨hal-00472450⟩

• COMM

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency…

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

• ART

A simple method for measuring Si-Fin sidewall roughness by AFM

X.H. Tang, V. Bayot, N. Reckinger, D. Flandre, J.P. Raskin, Emmanuel Dubois, B. Nysten

The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitoredin order to optimize the fin patterning…

IEEE Transactions on Nanotechnology, 2009, 8, pp.611-616. ⟨10.1109/TNANO.2009.2021064⟩. ⟨hal-00471972⟩

• ART

Deep level investigation by capacitance and conductance transient spectroscopy in AlGaN/GaN/SiC HEMTs

M. Gassoumi, B. Grimbert, M.A. Poisson, Julien Fontaine, M.A. Zaidi, Christophe Gaquière, H. Maaref

Journal of Optoelectronics and Advanced Materials, 2009, 11, pp.1713-1717. ⟨hal-00473671⟩

• COMM

Comparison of two coding techniques dedicated to UWB V2V communication system

Yassin El Hillali, Raja Elassali, Fouzia Boukour, A. El Abed, Atika Rivenq

9th International Conference on Intelligent Transport Systems Telecommunications, ITST 2009, 2009, France. pp.673-676, ⟨10.1109/ITST.2009.5399273⟩. ⟨hal-00474137⟩