Publications

• Autre publication scientifique

Etudes théoriques de l'effet du couplage électron-phonon sur les propriétés de transport dans les nanofils de silicium

Wenxing Zhang

2009. ⟨hal-00572808⟩

• Communication dans un congrès

Interférométrie THz pour applications en biologie

Vianney Mille, A. Treizebre, Nour Eddine Bourzgui, Bertrand Bocquet

16èmes Journées Nationales Microondes, JNM 2009, May 2009, Grenoble, France. pp.5F-22, 1-3. ⟨hal-00573532⟩

• Communication dans un congrès

Un radar ULB basé sur les statistiques d'ordres supérieurs pour la détection d'obstacles routiers

Laila Sakkila, Atika Rivenq, Yassin El Hillali, C. Tatkeu, A. El Abed

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.F2, 1-4. ⟨hal-00573510⟩

• Communication dans un congrès

Application de la méthode des différences finies (FDTD) pour la modélisation du SAR dans les tissus biologiques

S. Kassimi, S. Bri, M. Habibi, A. Mamouni

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.C1-1, 1-4. ⟨hal-00573518⟩

• Communication dans un congrès

Evaluation des effets d'exposition des téléphones cellulaires sur la tête humaine

S. Bri, O. Benzaim, A. Mamouni

TELECOM'2009 & 6èmes Journées Franco-Maghrébines des Micro-ondes et leurs Applications, 2009, Maroc. pp.B1-5, 1-4. ⟨hal-00573517⟩

• Article dans une revue

Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET

J. Kuzmik, S. Bychikhin, E. Pichonat, Christophe Gaquière, E. Morvan, E. Kohn, Jean-Pierre Teyssier, D. Pogany

In the framework of the Top Amplifier Research Groups in a European Team (TARGET) project, we developed a new electrical method for the temperature measurement of HEMTs and performed several unique studies on the self-heating effects in AlGaN/GaN HEMTs. This method, in combination with transient…

International Journal of Microwave and Wireless Technologies, 2009, 1, pp.153 - 160. ⟨10.1017/S1759078709990444⟩. ⟨hal-00514218⟩

• Communication dans un congrès

Novel approach for planar Bragg grating characterization using prism coupling

J. Pello, T. Le, A. Lim, El Hadj Dogheche, M. Kaba, K. Pita, Didier Decoster, J.P. Huignard, S.C. Tjin, J. Chazelas

Asia Communications and Photonics Conference and Exhibition, ACP 2009, Optoelectronic Materials and Devices IV, 2009, China. pp.76310A-1-7, ⟨10.1117/12.852247⟩. ⟨hal-00579156⟩

• Communication dans un congrès

A High Mobility Field-Effect Transistor as an Antenna for sub-THz Radiation

Maciej Sakowicz, Jerzy Łusakowski, Krzysztof Karpierz, Marian Grynberg, Wojciech Gwarek, Stephane Boubanga Tombet, Dominique Coquillat, Wojciech Knap, Andrey Shchepetov, S. Bollaert

The experiments on radiation coupling to field effect transistors working as terahertz radiation detectors are reported. Two types of high electron mobility transistors: InGaAs/InAlAs and GaAs/AlGaAs, with different layout geometries are studied. We show that terahertz radiation coupling efficiency…

29th International Conference on Physics of Semiconductors, ICPS-29, Jul 2008, Rio de Janeiro, Brazil. pp.503-504, ⟨10.1063/1.3295528⟩. ⟨hal-00545966⟩

• Article dans une revue

Modeling of three-dimensional diffusible resistors with the one-dimensional tube multiplexing method

J.N. Gillet, J.Y. Degorce, M. Meunier

Semiconductor Science and Technology, 2009, 24, pp.095010-1-11. ⟨10.1088/0268-1242/24/9/095010⟩. ⟨hal-00473096⟩

• Article dans une revue

Fast relaxation of hot carriers by impact ionization in semiconductor nanocrystals : role of defects

Guy Allan, Christophe Delerue

We present calculations predicting that defects at the surface of semiconductor nanocrystals have a strong influence on the dynamics of hot carriers after photoexcitation. The relaxation of excited carriers by impact ionization of carriers trapped on deep levels is efficient, in particular in the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2009, 79, pp.195324-1-5. ⟨10.1103/PhysRevB.79.195324⟩. ⟨hal-00473094⟩