Publications

Affichage de 10561 à 10570 sur 16175


  • Article dans une revue

Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux

F.J. Ferrer, E. Moreau, D. Vignaud, S. Godey, X. Wallart

Semiconductor Science and Technology, 2009, 24, pp.125014-1-4. ⟨10.1088/0268-1242/24/12/125014⟩. ⟨hal-00471909⟩

  • Article dans une revue

Monitoring SAW-actuated microdroplets in view of biological applications

A. Renaudin, J.P. Sozanski, B. Verbeke, V. Zhang, P. Tabourier, C. Druon

Sensors and Actuators B: Chemical, 2009, 138, pp.374-382. ⟨10.1016/j.snb.2009.02.031⟩. ⟨hal-00471820⟩

  • Article dans une revue

Reversible electrowetting on superhydrophobic double-nanotextured surfaces

F. Lapierre, V. Thomy, Yannick Coffinier, R. Blossey, Rabah Boukherroub

Langmuir, 2009, 25, pp.6551-6558. ⟨10.1021/la803756f⟩. ⟨hal-00471821⟩

  • Article dans une revue

Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model

T. Sadi, Jean-Luc Thobel

Journal of Physics: Conference Series, 2009, 193, pp.012017-1-4. ⟨10.1088/1742-6596/193/1/012017⟩. ⟨hal-00473657⟩

  • Article dans une revue

Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs

A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski

Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩

  • Article dans une revue

Physical analysis of thermal effects on the optimization of GaN Gunn diodes

Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger

Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩

  • Article dans une revue

Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation

C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik

IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩

  • Article dans une revue

InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess

M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn

IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩

  • Article dans une revue

High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack

T.C. Lim, O. Rozeau, C. Buj, M. Paccaud, Sylvie Lepilliet, Gilles Dambrine, Francois Danneville

Solid-State Electronics, 2009, 53, pp.433-437. ⟨10.1016/j.sse.2008.09.022⟩. ⟨hal-00471807⟩