Publications
Affichage de 10561 à 10570 sur 16175
Atomic scale flattening, step formation and graphitization blocking on 6H-and 4H-SiC{0001} surfaces under Si flux
F.J. Ferrer, E. Moreau, D. Vignaud, S. Godey, X. Wallart
Semiconductor Science and Technology, 2009, 24, pp.125014-1-4. ⟨10.1088/0268-1242/24/12/125014⟩. ⟨hal-00471909⟩
Monitoring SAW-actuated microdroplets in view of biological applications
A. Renaudin, J.P. Sozanski, B. Verbeke, V. Zhang, P. Tabourier, C. Druon
Sensors and Actuators B: Chemical, 2009, 138, pp.374-382. ⟨10.1016/j.snb.2009.02.031⟩. ⟨hal-00471820⟩
Reversible electrowetting on superhydrophobic double-nanotextured surfaces
F. Lapierre, V. Thomy, Yannick Coffinier, R. Blossey, Rabah Boukherroub
Langmuir, 2009, 25, pp.6551-6558. ⟨10.1021/la803756f⟩. ⟨hal-00471821⟩
Analog to digital microfluidic converter
Renaud Dufour, Chang Wu, Farida Bendriaa, Vincent Thomy, Vincent Senez
European COMSOL Conference, 2009, Milan, Italy. pp.1-4. ⟨hal-05146777⟩
Study of the high-frequency performance of III-As nanojunctions using a three-dimensional ensemble Monte Carlo model
T. Sadi, Jean-Luc Thobel
Journal of Physics: Conference Series, 2009, 193, pp.012017-1-4. ⟨10.1088/1742-6596/193/1/012017⟩. ⟨hal-00473657⟩
Tunable room temperature terahertz sources based on two dimensional plasma instability in GaN HEMTs
A. El Fatimy, T. Suemitsu, T. Otsuji, N. Dyakonova, W. Knap, Y.M. Meziani, S. Vandenbrouk, K. Madjour, D. Theron, Christophe Gaquière, P. Prystawko, C. Skierbiszewski
Journal of Physics: Conference Series, 2009, 193, pp.012072-1-4. ⟨10.1088/1742-6596/193/1/012072⟩. ⟨hal-00473645⟩
Physical analysis of thermal effects on the optimization of GaN Gunn diodes
Xing Tang, Michel Rousseau, Christophe Dalle, Jean-Claude de Jaeger
Applied Physics Letters, 2009, 95, pp.142102-1-3. ⟨10.1063/1.3240873⟩. ⟨hal-00473636⟩
Ultrathin InAlN/AlN barrier HEMT with high performance in normally off operation
C. Ostermaier, G. Pozzovivo, J.F. Carlin, B. Basnar, W. Schrenk, Y. Douvry, Christophe Gaquière, J.C. Dejaeger, K. Cico, K. Frohlich, M. Gonschorek, N. Grandjean, G. Strasser, D. Pogany, J. Kuzmik
IEEE Electron Device Letters, 2009, 30, pp.1030-1032. ⟨10.1109/LED.2009.2029532⟩. ⟨hal-00473635⟩
InAlN/GaN MOSHEMT with self-aligned thermally generated oxide recess
M. Alomari, F Medjdoub, J.F. Carlin, E. Feltin, N. Grandjean, A. Chuvilin, U. Kaiser, Christophe Gaquière, E. Kohn
IEEE Electron Device Letters, 2009, 30, pp.1131-1133. ⟨10.1109/LED.2009.2031659⟩. ⟨hal-00473634⟩
High frequency performance of sub-100 nm UTB-FDSOI featuring TiN/HfO2 gate stack
T.C. Lim, O. Rozeau, C. Buj, M. Paccaud, Sylvie Lepilliet, Gilles Dambrine, Francois Danneville
Solid-State Electronics, 2009, 53, pp.433-437. ⟨10.1016/j.sse.2008.09.022⟩. ⟨hal-00471807⟩