Publications

Affichage de 10911 à 10920 sur 16055


  • COMM

TEM analysis of ion plated HfO2/SiO2 multilayers for femtosecond lasers

Manuel Flury, Gilles Patriache, David Troadec, Olivier Parriaux

7th Symposium SiO2, advanced dielectrics and related devices, Jul 2008, Saint-Etienne, France. ⟨ujm-00290782⟩

  • PATENT

Commutateur optique ultra-rapide à faible diaphotie, et lignes à retards pour signaux hyperfréquences

Jean Chazelas, Malek Zegaoui, Joseph Harari, V. Magnin, S. Mac Murtry, Jean-Pierre Vilcot, Didier Decoster

France, N° de brevet: FR2910726 (A1). 2008. ⟨hal-00372069⟩

  • COMM

InAlN/GaN MOSHEMT with thermally grown oxide

F Medjdoub, J.-F Carlin, M Alomari, M Gonschorek, E Feltin, M A Py, Christophe Gaquière, N Grandjean, E Kohn

Device Research Conference, Jun 2008, Santa barbara, United States. ⟨hal-03281290⟩

  • COMM

Characterization of carbon nanotube field-effect transistors using an active load pull LSNA setup

Christophe Gaquière, Arnaud Curutchet, Didier Theron, Matthieu Werquin, Damien Ducatteau, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke

CNFETs have been characterized under large signal conditions at 600 MHz with an original active load pull setup using a LSNA. A non linear model of CNFET has been established and validated by comparison with the experimental results. Using this non linear model, design of circuits can be considered…

71st ARFTG Microwave Measurement Conference, ARFTG 2008, Jun 2008, Atlanta, GA, United States. ⟨10.1109/ARFTG.2008.4633311⟩. ⟨hal-00362030⟩

  • COMM

Scanning-probe measurements on undoped silicon nanowires

Lukasz Borowik, Heinrich Diesinger, D. Hourlier-Bahloul, Thierry Melin

Summer School on Semiconductor Nanowires, 3SN'2008, Jun 2008, Roscoff, France. ⟨hal-00376239⟩