Publications

Affichage de 11401 à 11410 sur 16055


  • COMM

CW generation up to 2 THz by ion-irradiated In0.53Ga0.47As photomixer driven at 1.55 µm wavelengths

Juliette Mangeney, Paul Crozat, A. Merigault, Karine Blary, Jean-Francois Lampin

We report the generation of continuous terahertz waves from microwave frequencies up to 2 THz obtained by photomixing two optical waves at 1.55-mum wavelengths in an optimized ion-irradiated In 0.53 Ga 0.47 As interdigitated photomixers. Output powers greater than 40 nW at 0.5 THz and 10 nW at 1…

Joint 33rd International Conference on Infrared and Millimeter Waves and 16th International Conference on Terahertz Electronics, IRMMW-THz 2008, Sep 2008, Pasadena, CA, United States. pp.424-425, ⟨10.1109/ICIMW.2008.4665631⟩. ⟨hal-00800986⟩

  • COMM

RS turbo codes with erasures for broad-band power line communication

F. Rouissi, F. Tlili, A. Ghazel, Virginie Degardin, M. Lienard

15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008, 2008, _, Malta. pp.822-825, ⟨10.1109/ICECS.2008.4674980⟩. ⟨hal-00800991⟩

  • ART

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

M.A. Di Forte-Poisson, M. Magis, Maurice Tordjman, J. Di Persio, R. Langer, L. Toth, Bela Pécz, M. Guziewicz, J. Thorpe, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Christophe Gaquière, Gaudenzio Meneghesso, Virginie Hoel, Jean-Claude Jacquet, Sylvain Laurent Delage

This paper reports on low-pressure metalorganic vapour deposition (LP-MOCVD) growth optimisation of GaAlN/GaN heterostructures grown on SiCopSiC (silicon carbide-oxyde-polycrystalline silicon carbide) composite substrates for HEMT applications, and on the first device performances obtained with…

Journal of Crystal Growth, 2008, 310 (23), pp.5232-5236. ⟨10.1016/j.jcrysgro.2008.08.035⟩. ⟨hal-00800708⟩

  • ART

Mechanism of mobility increasing of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma-quanta irradiation

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev

Journal of Applied Physics, 2008, 103, pp.083707-1-5. ⟨10.1063/1.2903144⟩. ⟨hal-00356986⟩

  • COMM

Recent achievement in the GaN epitaxy on silicon and engineered substrates process transfer for MBE high volume production

A. Wilk, M. Lijadi, R. Langer, P. Bove, J. Thorpe, H. Blanck, Virginie Hoel, N. Defrance, Jean-Claude de Jaeger

Materials Research Society Fall Meeting, MRS Fall 2008, Symposium on Performance and Reliability of Semiconductor Devices, 2008, Boston, MA, United States. pp.35-42, ⟨10.1557/PROC-1108-A04-01⟩. ⟨hal-00800978⟩

  • COMM

Fabrication and characterization of proton-exchanged waveguide on X-cut LiNbO3

G.Y. Sia, J.H. Teng, A.J. Danner, El Hadj Dogheche, R. Yin, S.S. Ang, A.B. Chew, M.Y. Lai, A. Gokarna, A. Stolz, Didier Decoster, S.Y. Tan

IEEE Photonics Global 2008, IPGC 2008, 2008, _, Singapore. pp.1-4, ⟨10.1109/IPGC.2008.4781358⟩. ⟨hal-00800976⟩

  • ART

TEM characterization of Si nanowires grown by CVD on Si pre-structured by nanosphere lithography

J.K.N. Lindner, D. Hourlier, D. Kraus, M. Weinl, Thierry Melin, B. Stritzker

Materials Science in Semiconductor Processing, 2008, 11, pp.169-174. ⟨10.1016/j.mssp.2008.09.016⟩. ⟨hal-00800706⟩

  • COMM

In-situ silicon integrated tuner for automated on-wafer mmW noise parameters extraction of Si HBT and MOSFET in the range 60-110 GHz

Y. Tagro, D. Gloria, S. Boret, Y. Morandini, Gilles Dambrine

72nd ARFTG Microwave Measurement Symposium, 2008, Portland, OR, United States. pp.119-122, ⟨10.1109/ARFTG.2008.4804284⟩. ⟨hal-00800955⟩