Publications

• Communication dans un congrès

Complete characterization in thin film using picosecond ultrasonics and nanostructured transducer

P.A. Mante, J.F. Robillard, Arnaud Devos, I. Roch-Jeune

Second ASA-EAA Joint Conference, ACOUSTICS'08, 2008, Paris, France. ⟨hal-00361485⟩

• Communication dans un congrès

Tunneling spectroscopy of semiconductor nanocrystals in superlattices

G. Mahieu, B. Grandidier, C. Delerue

Workshop on Statistical Physics and Low Dimensional Systems, 2008, Nancy, France. ⟨hal-00362016⟩

• Article dans une revue

Time-resolved detection of single-electron interference

S. Gustavsson, R. Leturcq, M. Studer, T. Ihn, K. Ensslin, D.C. Driscoll, A.C. Gossard

We demonstrate real-time detection of self-interfering electrons in a double quantum dot embedded in an Aharonov-Bohm interferometer, with visibility approaching unity. We use a quantum point contact as a charge detector to perform time-resolved measurements of single-electron tunneling. With…

Nano Letters, 2008, 8, pp.2547-2550. ⟨10.1021/nl801689t⟩. ⟨hal-00357780⟩

• Communication dans un congrès

Imaging the electron local density of states inside buried semiconductor quantum rings

B. Hackens, F. Martins, M.G. Pala, H. Sellier, T. Ouisse, X. Wallart, S. Bollaert, A. Cappy, V. Bayot, S. Huant

29th Conference on the Physics of Semiconductors, Rio de Janeiro, July 27- August 1, 2008, Jul 2008, Rio de Janeiro, Brazil. ⟨hal-00392551⟩

• Article dans une revue

Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap

N. Reckinger, Xing Tang, V. Bayot, Dmitri Yarekha, Emmanuel Dubois, S. Godey, X. Wallart, G. Larrieu, A. Łaszcz, J. Ratajczak, P.J. Jacques, J.P. Raskin

Journal of Applied Physics, 2008, 104 (10), pp.103523. ⟨10.1063/1.3010305⟩. ⟨hal-00356975⟩

• Article dans une revue

Side-gated transport in focused-ion-beam-fabricated multilayered graphene nanoribbons

J.F. Dayen, A. Mahmood, D.S. Golubev, I. Roch-Jeune, P. Salles, Erik Dujardin

A resist-less nanofabrication method, based on focused ion beam lithography, for connecting and tailoring a nanometer-scale planar device in ultrathin graphitic disks is demonstrated by producing 50-nm-wide double side-gated transistor devices (see image). Experiments and theory suggest that the…

Small, 2008, 4 (6), pp.716-720. ⟨10.1002/smll.200700913⟩. ⟨hal-00360027⟩

• Article dans une revue

AC Electric Field-assisted assembly and alignment of cellulose nanocrystals

Youssef Habibi, Thomas Heim, Roger Douillard

In this article, we describe an efficient physical electric-field-assisted method to study self-assembly and orientation of cellulose nanocrystals. When applying an alternating voltage to a cellulose nanocrystals suspension deposited onto a thin gap of coplanar lithographically patterned metallic…

Journal of Polymer Science Part B: Polymer Physics, 2008, 46 (14), pp.1430-1436. ⟨10.1002/polb.21479⟩. ⟨hal-02668395⟩

• Communication dans un congrès

AlGaN/GaN MISHEMT with hBN as gate dielectric

J.C. Gerbedoen, A. Soltani, M. Mattalah, Jean-Claude de Jaeger, P. Thevenin

19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Diamond 2008, 2008, Sitges, Spain. ⟨hal-00811732⟩

• Article dans une revue

The properties of epitaxial PMNT thin films grown on SrTiO3 substrates

R. Herdier, M. Detalle, D. Jenkins, Denis Remiens, D. Grebille, R. Bouregba

Journal of Crystal Growth, 2008, 311, pp.123-127. ⟨10.1016/j.jcrysgro.2008.10.070⟩. ⟨hal-00800677⟩

• Communication dans un congrès

Influence of the electronic structure and the multi-exciton spectral density on the multiple exciton generation in semiconductor nanocrystals

Guy Allan, Christophe Delerue

Several experimental works have reported that a single high-energy photon could generate multiple excitons in semiconductor nanocrystals and several theories have been proposed to explain these results. Using a tight-binding method, we calculate the electronic structure of InAs, Si, and PbSe…

CECAM Workshop on Critical Materials Issues in Photovoltaics : searching for solutions via theory and simulations, 2008, Lausanne, Switzerland. ⟨10.1103/PhysRevB.77.125340⟩. ⟨hal-00811727⟩