Publications

Affichage de 11501 à 11510 sur 16175


  • Article dans une revue

Effective elastic constants in acoustoelasticity

Marc Duquennoy, Mohammadi Ouaftouh, D. Devos, Frédéric Jenot, Mohamed Ourak

Applied Physics Letters, 2008, 92, pp.244105-1-3. ⟨10.1063/1.2945882⟩. ⟨hal-00360092⟩

  • Communication dans un congrès

Frequency behavior in pentacene MIS capacitors

C. Petit, D. Zander, K. Lmimouni, M. Ternisien, S. Lenfant, D. Vuillaume

4th International Meeting on Molecular Electronics, ElecMol'08, 2008, Grenoble, France. ⟨hal-00361618⟩

  • Communication dans un congrès

Preliminary investigations on the Te-doped AlInSb/GaInSb heterostructures for High Electron Mobility Transistor (HEMT) applications

L. Delhaye, L. Desplanque, X. Wallart

IEEE 20th Conference on Indium Phosphide and Related Materials, IPRM'08, 2008, France. pp.1-3, ⟨10.1109/ICIPRM.2008.4702932⟩. ⟨hal-00360480⟩

  • Article dans une revue

Mechanism of mobility increasing of the two-dimensional electron gas in AlGaN/GaN heterostructures under small dose gamma-quanta irradiation

A.M. Kurakin, S.A. Vitusevich, S.V. Danylyuk, H. Hardtdegen, N. Klein, Z. Bougrioua, B.A. Danilchenko, R.V. Konakova, A.E. Belyaev

Journal of Applied Physics, 2008, 103, pp.083707-1-5. ⟨10.1063/1.2903144⟩. ⟨hal-00356986⟩

  • Communication dans un congrès

Measurement (1/f noise, RTS) in molecular junction

N. Clément, S. Pleutin, O. Seitz, David Guérin, S. Lenfant, D. Cahen, D. Vuillaume

Indo-French Workshop on Multifunctional Molecular and Hybride Devices, 2008, Saclay, France. ⟨hal-00361584⟩

  • Article dans une revue

Surface potential of n- and p-type GaN measured by Kelvin force microscopy

Sophie Barbet, Raphaël Aubry, Marie-Antoinette Di Forte-Poisson, Jean-Claude Jacquet, D. Deresmes, Thierry Melin, Didier Theron

Applied Physics Letters, 2008, 93, pp.212107-1-3. ⟨10.1063/1.3028639⟩. ⟨hal-00357781⟩