Publications

• ART

Calculation and measurement of the magnetostriction of multilayered composites

L. Garcia-Gancedo, S. Busbridge, Philippe Pernod, Vladimir Preobrazhensky, O. Ducloux

Journal of Magnetism and Magnetic Materials, 2007, 310, pp.2627-2629. ⟨10.1016/j.jmmm.2006.11.051⟩. ⟨hal-00285635⟩

• ART

On the use of ultrasounds to quantify the longitudinal threshold force to detach osteoblastic cells from a conditioned glass substrate

Dorothée Debavelaere-Callens, L. Peyre, Pierre Campistron, H.F. Hildebrand

Biomolecuar Engineering, 2007, 24, pp.521-525. ⟨10.1016/j.bioeng.2007.08.016⟩. ⟨hal-00285683⟩

• ART

Physical study of the dissipated power area in high electron mobility transistors for thermal modelling

Brahim Benbakhti, Michel Rousseau, Jean-Claude de Jaeger

The hot area in power transistors due to the power dissipation is determined from a 2D-hydrodynamic model. The power is calculated everywhere in the device from the knowledge of the physical quantities (current density, electric field). The hot area is determined accurately to be coupled to a…

Microelectronics Journal, 2007, 38 (1), pp.7-13. ⟨10.1016/j.mejo.2006.07.025⟩. ⟨hal-00283492⟩

• ART

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• ART

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• ART

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.E. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn

Electronics Letters, 2007, 43, pp.309-311. ⟨10.1049/el:20073170⟩. ⟨hal-00283497⟩

• ART

Ionization energy of donor and acceptor impurities in semiconductor nanowires: importance of dielectric confinement

Mamadou Diarra, Yann-Michel Niquet, Christophe Delerue, Guy Allan

Calculations of the electronic states of donor and acceptor impurities in nanowires show that the ionization energy of the impurities is strongly enhanced with respect to the bulk, above all when the wires are embedded in a material with a low dielectric constant. In free-standing nanowires with…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.045301. ⟨10.1103/PhysRevB.75.045301⟩. ⟨hal-00283119⟩

• ART

Energy transfer between semiconductor nanocrystals : validity of Förster's theory

Guy Allan, Christophe Delerue

We theoretically study the energy transfer between semiconductor nanocrystals and we calculate the rate of this process in the case of direct-gap (InAs) and indirect-gap (Si) semiconductors. The calculations are based on the tight-binding method that enables us to determine the transfer rate,…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, 75, pp.195311. ⟨10.1103/PhysRevB.75.195311⟩. ⟨hal-00283123⟩

• ART

La teoria dei baricentri di Torricelli come fondamento della statica (Torricelli's theory of barycentre as a foundation of statics)

Danilo Capecchi, Raffaele Pisano

Physis; rivista internazionale di storia della scienza, 2007, XLIV (1), pp.1-29. ⟨hal-04508032⟩

• COMM

Growth and characterization of AlInN/GaN field effect transistors

J.F. Carlin, F Medjdoub, M. Gonschorek, E. Feltin, M.A. Py, Christophe Gaquière, N. Grandjean, E. Kohn

Proceedings of the 7th International Conference of Nitride Semiconductors, ICNS-7, 2007, Las Vegas, NV, United States. ⟨hal-00367697⟩