Publications

Affichage de 11791 à 11800 sur 16171


  • Communication dans un congrès

Monte Carlo comparison between InAlAs/InGaAS double-gate and standard HEMTs

B.G. Vasallo, T. Gonzalez, D. Pardo, J. Mateos, Nicolas Wichmann, S. Bollaert, A. Cappy

Spanish Conference on Electron Devices, 2007, Spain. pp.80-83, ⟨10.1109/SCED.2007.383958⟩. ⟨hal-00284024⟩

  • Communication dans un congrès

High-speed SiGe BiCMOS technologies : 120-nm status and end-of-roadmap challenges

P. Chevalier, B. Barbalat, M. Laurens, B. Vandelle, L. Rubaldo, B. Geynet, S.P. Voinigescu, T.O. Dickson, N. Zerounian, S. Chouteau, D. Dutartre, A. Monroy, F. Aniel, Gilles Dambrine, A. Chantre

7th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2007, 2007, United States. pp.18-23, ⟨10.1109/SMIC.2007.322759⟩. ⟨hal-00284032⟩

  • Communication dans un congrès

Compact multilayer piezoresistive gauge for in-plane strain measurement in liquids

Jean-Baptiste Bureau, Bernard Legrand, Dominique Collard, Lionel Buchaillot

This paper presents an original piezoresistive strain gauge architecture based on two polysilicon layers able to sense in-plane strain. These gauges are electrically isolated from the external environment in order to be used in liquids. The presented design is based on three optimization keypoints…

14th International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers'07, Jun 2007, Lyon, France. pp.2267-2270, ⟨10.1109/SENSOR.2007.4300621⟩. ⟨hal-00284392⟩

  • Communication dans un congrès

Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs

G. Larrieu, Emmanuel Dubois, R. Valentin, N. Breil, Francois Danneville, Gilles Dambrine, J.C. Pesant

IEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.147-150, ⟨10.1109/IEDM.2007.4418886⟩. ⟨hal-00284387⟩

  • Communication dans un congrès

UWB regulatory compliant synchronization signal for indoor broadcast

C. Laderriere, M. Heddebaut, N. Rocher, Atika Rivenq, Fouzia Boukour, Jean-Michel Rouvaen

4th Workshop on Positioning, Navigation and Communication, WPNC'07, 2007, Germany. pp.183-187, ⟨10.1109/WPNC.2007.353632⟩. ⟨hal-00284410⟩

  • Article dans une revue

Complete system for wireless powering and remote control of electrostatic actuators by inductive coupling

Philippe Basset, A. Kaiser, Bernard Legrand, D. Collard, L. Buchaillot

IEEE/ASME Transactions on Mechatronics, 2007, 12, pp.23-31. ⟨10.1109/TMECH.2006.886245⟩. ⟨hal-00255847⟩

  • Article dans une revue

Wide-band acousto-optic deflectors with high efficiency for visible range fringe pattern projector

Samuel Dupont, Jean-Claude Kastelik, F. Causa

Review of Scientific Instruments, 2007, 78, pp.105102-1-4. ⟨10.1063/1.2793775⟩. ⟨hal-00255746⟩

  • Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

  • Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

  • Article dans une revue

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.E. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn

Electronics Letters, 2007, 43, pp.309-311. ⟨10.1049/el:20073170⟩. ⟨hal-00283497⟩