Publications

• Communication dans un congrès

GaN devices for high performance RF power amplifier

Christophe Gaquière, Brahim Benbakhti, S. Boulay, N. Defrance, Damien Ducatteau, H. Gerard, J-C Gerbedoen, Bertrand Grimbert, Virginie Hoel, J. Lemaitre, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger, F. Medjoub, Raphaël Aubry, Charu Dua, Christian Brylinski, Didier Floriot, G. Lecoustre, Erwan Morvan, Marie-Antoinette Di Forte-Poisson, Sylvain Laurent Delage

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, Oct 2007, Munich, Germany. ⟨hal-00367425⟩

• Communication dans un congrès

Etude par microscopie à champ proche de structures à base de matériau III-N pour émetteurs électroniques planaires

Sophie Barbet, Thierry Melin, Didier Theron, Raphaël Aubry, Marie-Antoinette Di Forte-Poisson

Actes des 10èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2007, 2007, Lille, France. ⟨hal-00367413⟩

• Communication dans un congrès

Développement d'une mémoire non volatile à base de nanotubes de carbone multi-feuillets

David Brunel

Actes des 10èmes Journées Nationales du Réseau Doctoral en Microélectronique, JNRDM 2007, 2007, Lille, France. ⟨hal-00367414⟩

• Communication dans un congrès

TEM study of the silicidation process in Pt/Si and Ir/Si structures

A. Laszcz, J. Ratajczak, A. Czerwinski, J. Katcki, N. Breil, G. Larrieu, Emmanuel Dubois

Proceedings of the 15th International Conference on Microscopy of Semiconducting Materials, MSMXV, 2007, Cambridge, United Kingdom. ⟨hal-00367363⟩

• Communication dans un congrès

Impact of n-type channel implantation on performance of p-type Schottky barrier MOSFETs

N. Breil, Emmanuel Dubois, A. Pouydebasque, T. Skotnicki

Proceedings of the 12th Silicon Nanoelectronics Workshop, SNW 2007, 2007, Kyoto, Japan. ⟨hal-00367365⟩

• Communication dans un congrès

Characterization of insulated gate-gate versus Schottky-gate InAs/AlSb HEMTs

M. Malmkvist, E. Lefebvre, M. Borg, L. Desplanque, X. Wallart, Gilles Dambrine, S. Bollaert, J. Grahn

2nd European Microwave Integrated Circuits Conference, EuMIC 2007, 2007, Germany. pp.24-27, ⟨10.1109/EMICC.2007.4412638⟩. ⟨hal-00362728⟩

• Communication dans un congrès

Electronic, optical and transport properties of semiconductor nanowires : theory and simulations

Yann-Michel Niquet, Aurélien Lherbier, Martin P. Persson, François Triozon, Stéphane Roche, Mamadou Diarra, Christophe Delerue, Guy Allan

In this paper, we review and contrast some computational methodologies to investigate charge transport in low dimensional materials and devices. This includes ultra-scaled MOS devices as well as nanowires-based field effects transistors or carbon nanotubes-based emerging devices. After presenting…

397th Wilhelm and Else Heraeus Seminar on Semiconducting Nanowires : Physics, Materials and Devices, 2007, Bad Honnef, Germany. ⟨hal-00367404⟩

• Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

• Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

• Article dans une revue

Comparison of structural and electrical properties of PMN-PT films deposited on Si with different bottom electrodes

M. Detalle, Gang Wang, Denis Remiens, P. Ruterana, P. Roussel, B. Dkhil

PMN-PT (70/30) thin films were deposited by sputtering on silicon substrate covered with different bottom electrodes: TiOx/Pt and LaNiO3 (LNO). The bilayers TiOx/Pt are deposited by sputtering and the LNO layer by sol–gel. Whatever the bottom electrodes the perovskite phase appears at 400 °C; the…

Journal of Crystal Growth, 2007, 305 (1), pp.137-143. ⟨10.1016/j.jcrysgro.2007.04.020⟩. ⟨hal-00176607⟩