Publications

Affichage de 11871 à 11880 sur 16173


  • Communication dans un congrès

Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs

G. Larrieu, Emmanuel Dubois, R. Valentin, N. Breil, Francois Danneville, Gilles Dambrine, J.C. Pesant

IEEE International Electron Devices Meeting, IEDM 2007, 2007, United States. pp.147-150, ⟨10.1109/IEDM.2007.4418886⟩. ⟨hal-00284387⟩

  • Communication dans un congrès

UWB regulatory compliant synchronization signal for indoor broadcast

C. Laderriere, M. Heddebaut, N. Rocher, Atika Rivenq, Fouzia Boukour, Jean-Michel Rouvaen

4th Workshop on Positioning, Navigation and Communication, WPNC'07, 2007, Germany. pp.183-187, ⟨10.1109/WPNC.2007.353632⟩. ⟨hal-00284410⟩

  • Article dans une revue

Complete system for wireless powering and remote control of electrostatic actuators by inductive coupling

Philippe Basset, A. Kaiser, Bernard Legrand, D. Collard, L. Buchaillot

IEEE/ASME Transactions on Mechatronics, 2007, 12, pp.23-31. ⟨10.1109/TMECH.2006.886245⟩. ⟨hal-00255847⟩

  • Article dans une revue

Wide-band acousto-optic deflectors with high efficiency for visible range fringe pattern projector

Samuel Dupont, Jean-Claude Kastelik, F. Causa

Review of Scientific Instruments, 2007, 78, pp.105102-1-4. ⟨10.1063/1.2793775⟩. ⟨hal-00255746⟩

  • Article dans une revue

Silicon-molecules-metal junctions by transfert printing : chemical synthesis and electrical properties

David Guérin, C. Merckling, S. Lenfant, X. Wallart, S. Pleutin, D. Vuillaume

Journal of Physical Chemistry C, 2007, 111, pp.7947-7956. ⟨10.1021/jp067846v⟩. ⟨hal-00255833⟩

  • Article dans une revue

Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT

A. Soltani, A. Ben Moussa, S. Touati, Virginie Hoel, Jean-Claude de Jaeger, J. Laureyns, Y. Cordier, C. Marhic, M. A. Djouadi, C. Dua

High quality ohmic contacts were realized in order to obtain an AlGaN/GaN high electron mobility transistor (HEMT) on different substrates (Si, Al2O3, SiC). A metallization scheme based on Ti/Al/Ni/Au was used. The ohmic contacts were obtained using an optimized rapid thermal annealing (RTA) at…

Diamond and Related Materials, 2007, 16, pp.262-266. ⟨10.1016/j.diamond.2006.06.022⟩. ⟨hal-00267124⟩

  • Article dans une revue

Evaluation of AllnN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.E. Carlin, M. Gonschorek, E. Feltin, M.A. Py, N. Grandjean, E. Kohn

Electronics Letters, 2007, 43, pp.309-311. ⟨10.1049/el:20073170⟩. ⟨hal-00283497⟩

  • Communication dans un congrès

Design of band-stop filters using PZT layer on silicon substrate phononic crystals

Anne-Christine Hladky, Jerome O. Vasseur, Bertrand Dubus, F. Duval, C. Granger, Yan Pennec, Bahram Djafari-Rouhani, B. Morvan

IEEE International Ultrasonics Symposium, 2007, United States. pp.620-623, ⟨10.1109/ULTSYM.2007.161⟩. ⟨hal-00283995⟩

  • Article dans une revue

On-line tools for microscopic and macroscopic monitoring of microwave processing

S. Vaucher, P. Unifantowicz, C. Ricard, Luc Dubois, M. Kuball, J.-M. Catala-Civera, Dominique Bernard, M. Stampanoni, R. Nicula

Direct monitoring of temperature, chemistry and microstructure is required to understand microwave heating in more detail, in order to fully exploit the unique features this non-equilibrium processing method can offer. In this paper, we show first that microwave radiometry can be used to follow…

Physica B: Condensed Matter, 2007, 398 (2), pp.191-195. ⟨10.1016/j.physb.2007.04.064⟩. ⟨hal-00179746⟩