Publications

• Article dans une revue

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

I. Halidou, Z. Benzarti, Z. Bougrioua, T. Boufaden, B. El Jani

GaN has been grown using Si/N treatment growth by MOVPE on sapphire (0001) in a home-made vertical reactor. The growth was monitored by in situ laser reflectometry. The morphological, electrical and optical properties of GaN are investigated at all the growth stages. To this aim, the growth was…

Superlattices and Microstructures, 2006, 40 (4-6), pp.490-495. ⟨10.1016/j.spmi.2006.09.018⟩. ⟨hal-02906714⟩

• Brevet

Microsystème électromécanique comprenant une poutre se déformant par flexion

F. Casset, K. Segueni, A. de Grave, N. Abele

N° de brevet: FR2883560 (A1). 2006. ⟨hal-00372354⟩

• Communication dans un congrès

Surface capping of AlInN/GaN HEMT structures

F Medjdoub, D. Ducatteau, Christophe Gaquière, J.-F Carlin, M Gonschorek, E Feltin, M A Py, N Grandjean, E Kohn

European Workshop on III-Nitride Semiconductor Materials and Devices, Sep 2006, Heraklion, Greece. ⟨hal-03281380⟩

• Article dans une revue

Determination of the d31 piezoelectric coefficient of PbZrxTi1−xO3 thin films using multilayer buckled micromembranes

C. Ayela, Liviu Nicu, Caroline Soyer, Eric Cattan, C. Bergaud

The aim of this paper consists in the determination of the piezoelectric transverse coefficient d31 of PbZrxTi1-xO3 (PZT) thin films integrated in dedicated multilayer silicon-based micromembranes exhibiting an initial buckled profile. An analytical model specific to this configuration was built…

Journal of Applied Physics, 2006, 100 (5), pp.054908. ⟨10.1063/1.2338139⟩. ⟨hal-02470523⟩

• Communication dans un congrès

Archimedes’s centres of the gravity theory as a logical foundation in Torricelli mechanics?

Raffaele Pisano

2nd ESHS European Congress for the History of Science, 6–9 September, ESHS & University of Krakow, Sep 2006, Krakow, Poland. ⟨hal-04519303⟩

• Article dans une revue

Transmission filtering of a waveguide coupled to a stub microresonator

Y. Pennec, B. Djafari-Rouhani, Abdellatif Akjouj, J. Vasseur, Leonard Dobrzynski, J. Vilcot, M. Beaugeois, M. Bouazaoui, R. Fikri, J. Vigneron

Applied Physics Letters, 2006, 89 (10), pp.101113. ⟨10.1063/1.2345251⟩. ⟨hal-04070515⟩

• Communication dans un congrès

Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scaterring spectroscopy and transient interferometric mapping

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Di Forte-Poisson, B. Grimbert, Christophe Gaquière

Proceedings of the first European Microwave Integrated Circuits Conference, Sep 2006, Manchester, United Kingdom. ⟨hal-00337246⟩

• Article dans une revue

Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling

Brahim Benbakhti, Michel Rousseau, Ali Soltani, Jean-Claude de Jaeger

The power dissipation in a semiconductor device usually generates a self-heating effect, which becomes very significant for gallium nitride power applications. The operating temperature of these devices increases significantly, and the transport properties are then degraded (IEEE Electron Device…

IEEE Transactions on Electron Devices, 2006, 53 (9), pp.2237-2242. ⟨10.1109/TED.2005.881014⟩. ⟨hal-00127943⟩

• Article dans une revue

Simple self-consistent theory of adhesion at a bimetallic interface

G. Allan, M. Lannoo, Leonard Dobrzynski

Philosophical Magazine, 2006, 30 (1), pp.33-45. ⟨10.1080/14786439808206531⟩. ⟨hal-04069879⟩

• Brevet

Microrésonateur

N. Abele, P. Ancey, A. Talbot, K. Segueni, G. Bouche, T. Skotnicki, S. Monfray, F. Casset

N° de brevet: FR2881416 (A1). 2006. ⟨hal-00372356⟩