Publications

• Autre publication scientifique

ELFI : calculateur électromagnétique pour l'établissement de schémas électriques équivalents aux interconnexions “cuivre” couplées et pour la caractérisation des matériaux

Freddy Ponchel

2007. ⟨hal-00285758⟩

• Article dans une revue

Application of the FDTD method to determine complex permittivity of dielectric materials at microwave frequencies using a rectangular waveguide

J. Terhzaz, H. Ammor, A. Assir, A. Mamouni

A new measurement technique is presented to determine the complex permittivity of a dielectric material. The dielectric sample is loaded in a short-circuited rectangular waveguide. The reflection coefficient of the waveguide is measured by Network analyzer and calculated as a function of the…

Microwave and Optical Technology Letters, 2007, 49, pp.1964-1968. ⟨10.1002/mop.22611⟩. ⟨hal-00255766⟩

• Article dans une revue

Efficient de-embedding technique for 110-GHz deep-channel-MOSFET characterization

C. Andrei, D. Gloria, Francois Danneville, Gilles Dambrine

IEEE Microwave and Wireless Components Letters, 2007, 17, pp.301-303. ⟨10.1109/LMWC.2007.892990⟩. ⟨hal-00255756⟩

• Article dans une revue

Nonlinear imaging of isoechogenic phantoms using phase conjugation of the second acoustic harmonic

L. Krutyansky, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar

Physics of Wave Phenomena, 2007, 15, pp.186-190. ⟨10.3103/S1541308X07030053⟩. ⟨hal-00255796⟩

• Article dans une revue

La novità del rapporto fisica–matematica nelle Réflexions di Sadi Carnot (The Novelty of the Relationship Physics-Mathematics in Sadi Carnot's Réflexions)

Antonino Drago, Raffaele Pisano

Atti della Fondazione Ronchi, 2007, LXIII (4), pp.497-525. ⟨hal-04508041⟩

• Ouvrages

Lon-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 mu m for time domain terahertz spectroscopy

Juliette Mangeney, Nicolas Chimot, L. Meignien, Nicolas Zerounian, Paul Crozat, Karine Blary, Jean-Francois Lampin, Patrick Mounaix

pp.653-+, 2007, 2007 Joint 32nd International Conference on Infrared and Millimeter Waves and 15th International Conference on Terahertz Electronics, Vols 1 and 2, 978-1-4244-1438-3. ⟨hal-01553015⟩

• Article dans une revue

Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors

A. Le Louarn, F. Kapche, Jean-Marc Bethoux, Henri Happy, Gilles Dambrine, Vincent Derycke, Pascale Chenevier, N. Izard, M. F. Goffman, Jean-Philippe Bourgoin

High frequency capabilities of carbon nanotube field-effect transistors (CNTFETs) are investigated. Structures with a large number of single-walled carbon nanotubes were fabricated using dielecrophoresis to increase the density of nanotubes in the device channel. The authors obtained an intrinsic…

Applied Physics Letters, 2007, 90, pp.233108-1-3. ⟨10.1063/1.2743402⟩. ⟨hal-00255760⟩

• Article dans une revue

Electrical characterizations of paraelectric BST thin films up to 1 THz : realization of microwave phase shifters

Gabriel Vélu, Gregory Houzet, Ludovic Burgnies, Jean-Claude Carru, Aurélien Marteau, Karine Blary, Didier Lippens, Patrick Mounaix, Marc Tondusson, Edwin Nguema Agnandji

BST thin films have been deposited with a sol-gel technique on 4cm 2 sapphire. Electrical characterizations have been performed in a very large frequency range. From 1 kHz to 500 GHz, the dielectric constant ϵ r is around 300 with quasi no frequency dispersion. In the 500 GHz to 1 THz range, the…

Ferroelectrics, 2007, 353 (1), pp.29-37. ⟨10.1080/00150190701367036⟩. ⟨hal-00285626⟩

• Communication dans un congrès

Signaling pathway analysis using dielectric spectroscopy : a label free technology for cellular-assays

Vincent Senez, A. Treizebre, Bertrand Bocquet, Dominique Legrand, Joël Mazurier, Christian Slomianny, Eric Leclercq, Dominique Barthès-Biesel

Journées J3N du Réseau National en Nanosciences et Nanotechnologies – Les Nanosciences au cœur des Technologies Convergentes, 2007, Paris, France. ⟨hal-00285621⟩

• Article dans une revue

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Marie-Antoinette Di Forte-Poisson, Nicolas Sarazin, M. Magis, Maurice Tordjman, Erwan Morvan, Raphaël Aubry, J. Di Persio, Bertrand Grimbert

This paper reports on in situ passivation studies of GaAlN/GaN High electron mobility transistors (HEMT) structures grown by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) on sapphire and silicon carbide substrates. GaN, GaAlN, AlN and AlN/GaN superlattice (SL) layers have been deposited…

Journal of Crystal Growth, 2007, 298, pp.826-830. ⟨10.1016/j.jcrysgro.2006.10.193⟩. ⟨hal-00285680⟩