Publications

• Article dans une revue

A nanometric acoustic cross-talk device

Leonard Dobrzynski, H Al-Wahsh, Abdellatif Akjouj, G Hernández-Cocoletzi

Journal of Physics: Condensed Matter, 2006, 18 (12), pp.3151-3156. ⟨10.1088/0953-8984/18/12/001⟩. ⟨hal-04070893⟩

• Communication dans un congrès

History and Teaching Physics

Raffaele Pisano

Sympsium History of physics and didactic, at XCII Italian Physical Society, 25–26 March, Italian Physical Society, Mar 2006, Como, Italy. ⟨hal-04519324⟩

• Communication dans un congrès

Scientific education. Work-hypothesis

Raffaele Pisano

AIF Latina Workshop Science & Teaching, 18th March, IIS Marconi & AIF Latina, Mar 2006, Latina, Italy. ⟨hal-04518906⟩

• Article dans une revue

Photomixing at 1.55 µm in ion-irradiated In0.53Ga0.47As on InP

Nicolas Chimot, Juliette Mangeney, Paul Crozat, Jean-Michel Lourtioz, Karine Blary, Jean-Francois Lampin, Gaël Mouret, Damien Bigourd, Eric Fertein

We report the first demonstration of a terahertz photomixer made of ion-irradiated In0.53Ga0.47As lattice-matched to InP and fiber-optic coupled with the drive lasers. A continuous-wave radiation is generated at frequencies up to 0.8 THz by photomixing two continuous-wave laser diodes around 1.55…

Optics Express, 2006, 14 (5), pp.1856-1861. ⟨10.1364/OE.14.001856⟩. ⟨hal-00162818⟩

• Article dans une revue

Electrochemical investigation of gold/silica thin film interfaces for electrochemical surface plasmon resonance studies

Sabine Szunerits, Rabah Boukherroub

The paper reports on the electrochemical behaviour of a thin gold film electrode coated with a 9.7 nm thick silicon dioxide (SiO_x) layer. Chemical and mechanical stable SiO_x layers on gold were synthesised by plasma enhanced chemical vapour deposition (…

Electrochemistry Communications, 2006, 8 (3), pp. 439-444. ⟨10.1016/j.elecom.2006.01.006⟩. ⟨hal-00333307⟩

• Article dans une revue

Influence of crystal quality on electron mobility in AlGaN/GaN HEMTs grown on Si(111), SiC and GaN templates

Y. Cordier, P. Lorenzini, M. Hugues, F. Semond, F. Natali, Z. Bougrioua, J. Massies, E. Frayssinet, B. Beaumont, P. Gibart, J.-P. Faurie

Journal de Physique IV Proceedings, 2006, 132, pp.365-368. ⟨10.1051/jp4:2006132070⟩. ⟨hal-02906684⟩

• Article dans une revue

Water Exclusion at the Nanometer Scale Provides Long-Term Passivation of Silicon (111) Grafted with Alkyl Monolayers

P. Gorostiza, C. Henry de Villeneuve, Q. Sun, F. Sanz, X. Wallart, R. Boukherroub, P. Allongue

This work is a quantitative study of the conditions required for a long-term passivation of the interface silicon−alkyl monolayers prepared by thermal hydrosilyation of neat 1-alkenes on well-defined H−Si(111) surfaces. We present electrochemical capacitance measurements (C−U) in combination with…

Journal of Physical Chemistry B, 2006, 110 (11), pp.5576-5585. ⟨10.1021/jp054825c⟩. ⟨hal-04166437⟩

• Article dans une revue

Preparation and Characterization of Thin Films of SiO_x on gold substrates for surface plasmon resonance studies

Sabine Szunerits, Rabah Boukherroub

We report here on the fabrication and characterization of stable thin films of amorphous silica (SiO_x) deposited on glass slides coated with a 5 nm adhesion layer of titanium and 50 nm of gold, using the plasma-enhanced chemical vapor deposition (PECVD) technique. The…

• Article dans une revue

A 310°/3.6dB K-band phaseshifter using paraelectric BST thin films

Gabriel Vélu, Karine Blary, Ludovic Burgnies, Jean-Claude Carru, Elisabet Delos, Aurélien Marteau, Didier Lippens

Ferro- and para-electric BaSrTiO/sub 3/ (/spl epsiv//sub r//spl sim/350 and tg/spl delta//spl sim/5/spl times/10/sup -2/ at 0V) thin films were deposited by low-cost sol-gel techniques. Subsequently, the films were used for fabricating coplanar waveguide phaseshifters using tunable finger-shaped…

IEEE Microwave and Wireless Components Letters, 2006, 16 (2), pp.87-89. ⟨10.1109/LMWC.2005.863198⟩. ⟨hal-00126833⟩

• Communication dans un congrès

Caractérisation et modélisation non linéaire de Transistors à Effet de Champs à Nano tubes de Carbone (CNFETs) à l'aide d'un Analyseur de réseau non linéaire (LSNA)

Arnaud Curutchet, Jean-Marc Bethoux, Matthieu Werquin, Henri Happy, Didier Theron, Damien Ducatteau, Christophe Gaquière

GDR G2054 Nanoélectronique, Feb 2006, Grenoble, France. ⟨hal-00197505⟩