Publications

• Communication dans un congrès

Design techniques for very high speed digital delta-sigma modulators aimed at all-digital RE transmitters

Antoine Frappé, A. Flament, Andreas Kaiser, Bruno Stefanelli, A. Cathelin, R. Daouphars

This paper presents a very high-speed delta-sigma modulator for achieving digital generation of radio-frequency signals. About 68 dB of ACLR (adjacent channel leakage ratio) is obtained on the 7.8 GS/s output of the delta-sigma modulator for WCDMA standard. This is achieved by using original…

2006 13th IEEE International Conference on Electronics, Circuits and Systems, Dec 2006, Nice, France. pp.1113-1116, ⟨10.1109/ICECS.2006.379634⟩. ⟨hal-03377054⟩

• Communication dans un congrès

Fabrication of 1mm3 size zero-level packaging using wafer-level BCB bonding and glass wet-etching technique for devices MEMS

S. Seok, N. Rolland, P.A. Rolland

2006, pp.53-54. ⟨hal-00147518⟩

• Communication dans un congrès

A co-operative radar system for collision avoidance and communications between vehicles

C. Tatkeu, P. Deloof, Yassin El Hillali, Atika Rivenq, Jean-Michel Rouvaen

2006, pp.1012-1016. ⟨hal-00147738⟩

• Communication dans un congrès

Dielectrophoresis, cell culture, and electrical impedance spectroscopy applied to adherent cells in a single biochip

E. Lennon, S. Ostrovidov, V. Senez, T. Fujii

2006, 4 pp. ⟨hal-00147726⟩

• Communication dans un congrès

On the efficiency of several active materials used for vibration damping

Anne-Christine Hladky, C. Granger, M. Phamthi

2006, pp.1128-1131. ⟨hal-00147505⟩

• Communication dans un congrès

Molecular-scale electronics : status and perspectives

D. Vuillaume

2nd International Nanotechnology Conference, NSF-NNI, 2006, Arlington, United States. ⟨hal-00127158⟩

• Article dans une revue

Epitaxial orientation of III-nitrides grown on R-plane sapphire by metal-organic-vapor-phase epitaxy

Philippe Vennegues, Zahia Bougrioua

The absolute epitaxial relationships between III-nitride films and R-plane sapphire are investigated using convergent beam electron diffraction. The resulting relationships are found to be[1−100]III-N‖‖[11−20]sapphire and [0001]III-N‖‖[−1101]sapphire, respectively. The O–Al bonds in the sapphire…

Applied Physics Letters, 2006, 89, pp.111915. ⟨10.1063/1.2353810⟩. ⟨hal-02906710⟩

• Communication dans un congrès

Nanostructured self-assembled monolayers of long-chain alkyltrichlorosilanes on Si

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

International Conference on Nano-structures Self-assembling, 2006, Aix-en-Provence, France. ⟨hal-00127135⟩

• Communication dans un congrès

65 nm RFCMOS technologies with bulk and HR SOI substrate for millimeter wave passives and circuits characterized up to 220 GHz

F. Gianesello, D. Gloria, S. Montusclat, C. Raynaud, S. Boret, C. Clement, S. Dambrine, Sylvie Lepilliet, F. Saguin, P. Scheer, P. Benech, J.M. Fournier

2006, 4 pp. ⟨hal-00154919⟩

• Article dans une revue

Well-Defined Carboxyl-Terminated Alkyl Monolayers Grafted onto H−Si(111): Packing Density from a Combined AFM and Quantitative IR Study

Anne Faucheux, Anne Chantal Gouget-Laemmel, Catherine Henry de Villeneuve, Rabah Boukherroub, François Ozanam, Philippe Allongue, Jean-Noël Chazalviel

This work demonstrates that well-defined mixed carboxyl-terminated/methyl-terminated alkyl monolayers can be prepared in one step on H-terminated Si(111) via direct photochemical hydrosilylation of undecylenic acid and 1-decene mixtures. As evidenced by AFM imaging and IR spectroscopy, a final…

Langmuir, 2006, 22 (1), pp.153-162. ⟨10.1021/la052145v⟩. ⟨hal-04166426⟩